Charge effect in secondary electron emission from silicon surface induced by slow neon ions
文献类型：期刊论文
| 作者 | Xiao, GQ1,3 ; Zhang, XA2,3; Wang, YY3; Wang, JG1,4; Zhao, YT1,3; Zeng, LX1,2,4; Xu, ZF1,3,4; Xu, ZF (reprint author), Xi An Jiao Tong Univ, Dept Appl Phys, Xian 710049, Peoples R China.; Li, FL1,4
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| 刊名 | LASER AND PARTICLE BEAMS
 |
| 出版日期 | 2012 |
| 卷号 | 30页码:319-324 |
| 关键词 | Charge restrain factor Electron emission yield Highly charged ions (HCI) Threshold velocity |
| ISSN号 | 0263-0346 |
| DOI | DOI:10.1017/S0263034612000171 |
| 英文摘要 | Total electron emission yield for impact of slow Neq+(q = 2, 4, 6, 8) ions with various kinetic energy under normal incidence on n-type Si has been measured. It is shown that for the same charge state, the total electron yield gamma increases linearly as the kinetic energy of projectile at impact increases, up to velocities corresponding to the "classical" threshold. Separation of kinetic electron yield gamma(KE) and potential electron yield gamma(PE) shows that gamma(PE) is proportional to the ion charge state and gamma(KE) increases linearly with projectile velocity. Finally, based on "single hole without hopping" hypothesis, the expression of the "CRF" F(q) is given, and the relation between gamma(KE) and q is obtained successfully for the first time, which is also a basis for judging whether the "trampoline effect" exists. |
| WOS关键词 | CLEAN METAL-SURFACE; INTENSE HEAVY-ION; WORK FUNCTION; HOLLOW ATOMS; LASER-BEAMS; MATTER; YIELDS |
| 资助项目 | WTZ[1390] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000305688100019 |
| 出版者 | CAMBRIDGE UNIV PRESS |
| 资助机构 | NSFC in China ; NSFC in China ; WTZ ; WTZ |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/23415]  |
| 专题 | 近代物理研究所_兰州重离子研究装置 近代物理研究所_实验物理中心 |
| 通讯作者 | Xu, ZF (reprint author), Xi An Jiao Tong Univ, Dept Appl Phys, Xian 710049, Peoples R China. |
| 作者单位 | 1.Xi An Jiao Tong Univ, HCI Joint Ctr, Xian 710049, Peoples R China 2.Xianyang Normal Univ, Sch Phys & Elect Engn, Xianyang, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou, Peoples R China 4.Xi An Jiao Tong Univ, Dept Appl Phys, Xian 710049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiao, GQ,Zhang, XA,Wang, YY,et al. Charge effect in secondary electron emission from silicon surface induced by slow neon ions[J]. LASER AND PARTICLE BEAMS,2012,30:319-324. |
| APA | Xiao, GQ.,Zhang, XA.,Wang, YY.,Wang, JG.,Zhao, YT.,...&Li, FL.(2012).Charge effect in secondary electron emission from silicon surface induced by slow neon ions.LASER AND PARTICLE BEAMS,30,319-324. |
| MLA | Xiao, GQ,et al."Charge effect in secondary electron emission from silicon surface induced by slow neon ions".LASER AND PARTICLE BEAMS 30(2012):319-324. |
入库方式： OAI收割
来源：近代物理研究所
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