Study of channeling effect by impact of highly charged ions on crystal surface of Si(110)
文献类型：期刊论文
| 作者 | Han Yun-Cheng2; Wang Tie-Shan2; Peng Hai-Bo2; Wang Yu-Yu1 ; Zhao Yong-Tao1; Cheng Rui2; Xu He2; Ding Da-Jie2
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2008-04-01 |
| 卷号 | 57页码:2161-2164 |
| 关键词 | highly charged ions sputtering channeling effect |
| ISSN号 | 1000-3290 |
| 英文摘要 | The (110) crystal surface of Si was bombarded by slow highly charged ions (Pbq+, Arq+) and the secondary particle emission was measured for different incident angles. Comparing the relationship between the sputtering yield and the incident angle, channeling effect was suggested. The channeling effect in interaction of highly charged ions with Si causes the sputtering yield to depend strongly on kinetic energy. Highly charged ions can enhance sputtering yield at smaller incident angles. At incident angles from 40 degrees to 50 degrees, the higher the potential energy of highly charged ion, the greater the sputtering yield. |
| WOS关键词 | SOLID-SURFACE ; SLOW ; ENERGY ; TRAP |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000255087200027 |
| 出版者 | CHINESE PHYSICAL SOC |
| 源URL | [http://119.78.100.186/handle/113462/29704]  |
| 专题 | 近代物理研究所_实验物理中心 |
| 通讯作者 | Peng Hai-Bo |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Lanzhou Univ, Inst Nucl Sci & Technol, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han Yun-Cheng,Wang Tie-Shan,Peng Hai-Bo,et al. Study of channeling effect by impact of highly charged ions on crystal surface of Si(110)[J]. ACTA PHYSICA SINICA,2008,57:2161-2164. |
| APA | Han Yun-Cheng.,Wang Tie-Shan.,Peng Hai-Bo.,Wang Yu-Yu.,Zhao Yong-Tao.,...&Ding Da-Jie.(2008).Study of channeling effect by impact of highly charged ions on crystal surface of Si(110).ACTA PHYSICA SINICA,57,2161-2164. |
| MLA | Han Yun-Cheng,et al."Study of channeling effect by impact of highly charged ions on crystal surface of Si(110)".ACTA PHYSICA SINICA 57(2008):2161-2164. |
入库方式： OAI收割
来源：近代物理研究所
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