Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits
文献类型:期刊论文
作者 | Shao, Cuiping2; Li, Huiyun2; Xu, Guoqing2; Guo, Jinlong1![]() ![]() |
刊名 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE
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出版日期 | 2015-06-01 |
卷号 | 62页码:1341-1348 |
关键词 | Cryptographic integrated circuits fault injection heavy ion microbeam single-event transient (SET) |
ISSN号 | 0018-9499 |
DOI | 10.1109/TNS.2015.2423672 |
英文摘要 | Transistors hit by heavy ions may conduct transiently, thereby introducing transient logic errors. Attackers can exploit these abnormal behaviors and extract sensitive information from the electronic devices. This paper demonstrates an ion irradiation fault injection attack experiment into a cryptographic field-programmable gate-array (FPGA) circuit. The experiment proved that the commercial FPGA chip is vulnerable to low-linear energy transfer carbon irradiation, and the attack can cause the leakage of secret key bits. A statistical model is established to estimate the possibility of an effective fault injection attack on cryptographic integrated circuits. The model incorporates the effects from temporal, spatial, and logical probability of an effective attack on the cryptographic circuits. The rate of successful attack calculated from the model conforms well to the experimental results. This quantitative success rate model can help evaluate security risk for designers as well as for the third-party assessment organizations. |
WOS关键词 | SINGLE-EVENT TRANSIENTS ; KEY CRYPTOSYSTEMS ; ATTACKS ; PROPAGATION ; LOGIC |
资助项目 | National S&T Major Project of China[2014ZX01032401-001] ; Shenzhen ST Project[JCYJ20140417113430591] ; Shenzhen ST Project[GJHZ20140417113430584] ; Guangdong ST Funding[2013B050800003] ; Youth Innovation Promotion Association, Chinese Academy of Sciences ; CAS[O713040YZ0] |
WOS研究方向 | Engineering ; Nuclear Science & Technology |
语种 | 英语 |
WOS记录号 | WOS:000356459900019 |
出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
资助机构 | National S&T Major Project of China ; Shenzhen ST Project ; Guangdong ST Funding ; Youth Innovation Promotion Association, Chinese Academy of Sciences ; CAS |
源URL | [http://119.78.100.186/handle/113462/39970] ![]() |
专题 | 近代物理研究所_实验物理中心 |
通讯作者 | Li, Huiyun |
作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Univ Hong Kong, Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China |
推荐引用方式 GB/T 7714 | Shao, Cuiping,Li, Huiyun,Xu, Guoqing,et al. Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2015,62:1341-1348. |
APA | Shao, Cuiping,Li, Huiyun,Xu, Guoqing,Guo, Jinlong,Dai, Liang,&Du, Guanghua.(2015).Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,62,1341-1348. |
MLA | Shao, Cuiping,et al."Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 62(2015):1341-1348. |
入库方式: OAI收割
来源:近代物理研究所
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