中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits

文献类型:期刊论文

作者Shao, Cuiping2; Li, Huiyun2; Xu, Guoqing2; Guo, Jinlong1; Dai, Liang2; Du, Guanghua1
刊名IEEE TRANSACTIONS ON NUCLEAR SCIENCE
出版日期2015-06-01
卷号62页码:1341-1348
关键词Cryptographic integrated circuits fault injection heavy ion microbeam single-event transient (SET)
ISSN号0018-9499
DOI10.1109/TNS.2015.2423672
英文摘要Transistors hit by heavy ions may conduct transiently, thereby introducing transient logic errors. Attackers can exploit these abnormal behaviors and extract sensitive information from the electronic devices. This paper demonstrates an ion irradiation fault injection attack experiment into a cryptographic field-programmable gate-array (FPGA) circuit. The experiment proved that the commercial FPGA chip is vulnerable to low-linear energy transfer carbon irradiation, and the attack can cause the leakage of secret key bits. A statistical model is established to estimate the possibility of an effective fault injection attack on cryptographic integrated circuits. The model incorporates the effects from temporal, spatial, and logical probability of an effective attack on the cryptographic circuits. The rate of successful attack calculated from the model conforms well to the experimental results. This quantitative success rate model can help evaluate security risk for designers as well as for the third-party assessment organizations.
WOS关键词SINGLE-EVENT TRANSIENTS ; KEY CRYPTOSYSTEMS ; ATTACKS ; PROPAGATION ; LOGIC
资助项目National S&T Major Project of China[2014ZX01032401-001] ; Shenzhen ST Project[JCYJ20140417113430591] ; Shenzhen ST Project[GJHZ20140417113430584] ; Guangdong ST Funding[2013B050800003] ; Youth Innovation Promotion Association, Chinese Academy of Sciences ; CAS[O713040YZ0]
WOS研究方向Engineering ; Nuclear Science & Technology
语种英语
WOS记录号WOS:000356459900019
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
资助机构National S&T Major Project of China ; Shenzhen ST Project ; Guangdong ST Funding ; Youth Innovation Promotion Association, Chinese Academy of Sciences ; CAS
源URL[http://119.78.100.186/handle/113462/39970]  
专题近代物理研究所_实验物理中心
通讯作者Li, Huiyun
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Chinese Univ Hong Kong, Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
推荐引用方式
GB/T 7714
Shao, Cuiping,Li, Huiyun,Xu, Guoqing,et al. Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2015,62:1341-1348.
APA Shao, Cuiping,Li, Huiyun,Xu, Guoqing,Guo, Jinlong,Dai, Liang,&Du, Guanghua.(2015).Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,62,1341-1348.
MLA Shao, Cuiping,et al."Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 62(2015):1341-1348.

入库方式: OAI收割

来源:近代物理研究所

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