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Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL

文献类型：期刊论文

作者Wang, Bin1; Liu, Tianqi1,4,5; Liu, Jie1; Yang, Zhenlei2; Guo, Jinlong1; Du, Guanghua1; Tong, Teng3; Wang, Xiaohui1; Su, Hong1; Liu, Wenjing1
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2017-08-01
卷号404页码:254-258
关键词Heavy-ion microbeam High-energy Single event upset FPGA Imaging
ISSN号0168-583X
DOI10.1016/j.nimb.2017.01.069
英文摘要The heavy-ion imaging of single event upset (SEU) in a flash-based field programmable gate array (FPGA) device was carried out for the first time at Heavy Ion Research Facility in Lanzhou (HIRFL). The three shift register chains with separated input and output configurations in device under test (DUT) were used to identify the corresponding logical area rapidly once an upset occurred. The logic units in DUT were partly configured in order to distinguish the registers in SEU images. Based on the above settings, the partial architecture of shift register chains in DUT was imaged by employing the microbeam of Kr-86 ion with energy of 25 MeV/u in air. The results showed that the physical distribution of registers in DUT had a high consistency with its logical arrangement by comparing SEU image with logic configuration in scanned area. (C) 2017 Elsevier B.V. All rights reserved.
WOS关键词SINGLE EVENT UPSET ; INDUCED CHARGE ; POWER MOSFETS ; SYSTEM ; EPILAYER ; BURNOUT ; BULK ; SOI
资助项目National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[U1632271] ; Ministry of Science and Technology[2012YQ03014204]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000404709900048
出版者ELSEVIER SCIENCE BV
资助机构National Natural Science Foundation of China ; Ministry of Science and Technology
源URL[http://119.78.100.186/handle/113462/45116]  
专题近代物理研究所_实验物理中心
通讯作者Liu, Jie
作者单位1.Chinese Acad Sci, Inst Modern Phys, Nanchang Rd 509, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Beijing 100094, Peoples R China
3.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
5.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Bin,Liu, Tianqi,Liu, Jie,et al. Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2017,404:254-258.
APA Wang, Bin.,Liu, Tianqi.,Liu, Jie.,Yang, Zhenlei.,Guo, Jinlong.,...&Liu, Jiande.(2017).Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,404,254-258.
MLA Wang, Bin,et al."Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 404(2017):254-258.

入库方式： OAI收割

来源：近代物理研究所

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