Electron emission and surface etching by slow and medium highly charged ions on HOPG surface
文献类型：会议论文
| 作者 | Xiao, Guoqing1 ; Wang, Xing1; Lei, Yu1; Zhou, Xianming1; Yu, Yang1,2; Ren, Jieru1,2; Cheng, Rui1; Zhao, Yongtao1; Sun, Jianrong1; Wang, Yuyu1
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| 出版日期 | 2013-12-15 |
| 关键词 | Highly charged ions Electron emission Surface nanostructuring HOPG |
| 卷号 | 317 |
| DOI | 10.1016/j.nimb.2013.04.024 |
| 页码 | 33-36 |
| 英文摘要 | Highly charged (Xe-129(q+), q = 10-30) ion-induced secondary electron emission and formation of nanostructure on the surface of highly oriented pyrolytic graphite (HOPG) have been studied on the 320 kV ECR platform for Highly Charged Ion Beam at IMP-CAS, Lanzhou. The experimental data of the total secondary electron yields are used to separate contributions of kinetic and potential electron yields. The estimated kinetic electron yields are about 17 and 35 electron/ion by ions with kinetic energies of 600 keV and 5 MeV, respectively. The potential electron yield increases linearly with increasing potential energy of the incident ion. The total electron yield, however, does not depend significantly on kinetic energy. AFM analysis of the HOPG surface bombarded with Xe30+ ions revealed regular hillock like nanostructure. The relationship between hillock size (height and width) and ion's energy (including potential energy and kinetic energy) shows the same trend with the total electron yield which increases with potential energy and is independent on incident kinetic energy. (C) 2013 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000329378100007 |
| 源URL | [http://119.78.100.186/handle/113462/57683]  |
| 专题 | 近代物理研究所_实验物理中心 近代物理研究所_先进核能材料研究室（ADS） 近代物理研究所_兰州重离子研究装置 |
| 通讯作者 | Wang, Yuyu |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiao, Guoqing,Wang, Xing,Lei, Yu,et al. Electron emission and surface etching by slow and medium highly charged ions on HOPG surface[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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