Evolution of defects in silicon carbide implanted with helium ions
文献类型：期刊论文
| 作者 | Zhang CH(张崇宏)
|
| 刊名 | Nuclear Instruments and Methods in Physics Research B
 |
| 出版日期 | 2014-01-15 |
| 卷号 | 326期号:326页码:345–350 |
| 关键词 | Silicon carbide Helium Implantation Defect Radiation damage |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2013.10.064 |
| 英文摘要 | Effects of accumulation of radiation damage in silicon carbide are important concerns for the use of silicon carbide in advanced nuclear energy systems. In the present work lattice damage in silicon carbide crystal (4H type) implanted with 100 keV He-4(+) ions was investigated with Rutherford backscattering spectrometry in channeling geometry (RBS/c) and positron beam Doppler broadening spectrometry (PBDB). Helium implantation was performed at the specimen temperature of 510 K to avoid amorphization of the SiC crystal. Fluences of helium ions were selected to be in the range from 1 x 10(16) to 3 x 10(16) ions cm(-2), around the dose threshold for the formation of observable helium bubbles under transmission electron microscopes (TEM). |
| WOS关键词 | VACANCY-TYPE DEFECTS ; POSITRON-ANNIHILATION ; DAMAGE ; BEAM ; IRRADIATION ; TEMPERATURE ; ACCUMULATION ; DEPENDENCE ; CERAMICS ; CRYSTALS |
| 资助项目 | National Magnetic Confinement Fusion Program[2011GB108003] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000335631300079 |
| 出版者 | ELSEVIER SCIENCE BV |
| 公开日期 | 2014-12-16 |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/12540]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 |
| 推荐引用方式 GB/T 7714 | Zhang CH. Evolution of defects in silicon carbide implanted with helium ions[J]. Nuclear Instruments and Methods in Physics Research B,2014,326(326):345–350. |
| APA | Zhang CH.(2014).Evolution of defects in silicon carbide implanted with helium ions.Nuclear Instruments and Methods in Physics Research B,326(326),345–350. |
| MLA | Zhang CH."Evolution of defects in silicon carbide implanted with helium ions".Nuclear Instruments and Methods in Physics Research B 326.326(2014):345–350. |
入库方式： OAI收割
来源：近代物理研究所
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