Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC
文献类型：期刊论文
| 作者 | Wei, KF; Wang, J; Song, P; Pang, LL; Zhu, YB; Du, YY; Zhu, HP; Li, YF; Cui, MH; Sun, JR
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| 刊名 | JOURNAL OF NUCLEAR MATERIALS
 |
| 出版日期 | 2014 |
| 卷号 | 455期号:1-3页码:116-121 |
| ISSN号 | 0022-3115 |
| DOI | 10.1016/j.jnucmat.2014.05.028 |
| 英文摘要 | The effects of annealing temperature on strain and mechanical property changes of 6H-SiC implanted with helium ions at 600 K to doses of 3 x 10(15) cm(-2), 1 x 10(16) cm(-2) and 3 x 10(16) cm(-2) and at an ion energy of 100 keV were investigated by using high-resolution X-ray diffraction (XRD), nano-indentation and transmission electron microscopy (TEM). Strain increases with increasing displacements per atom (dpa). Strain relaxation in terms Of changes in Delta d/d exhibited a linear decrease with increasing annealing temperature ranging from 873 K to 1473 K for 30 min in vacuum. The relaxation activation energies of the strains were estimated by Arrhenius law to be in the range of 0.4-0.7 eV. Irradiation-induced hardening was observed via nano-indentation measurements as a function of annealing. The hardness of the highly damaged layer decreased monotonically with increasing annealing temperature for the samples implanted with He ions to doses of 3 x 10(15) cm(-2) and 1 x 10(16) cm(-2), and where no helium bubbles were formed in the damaged layer. The hardness of the damaged layer initially decreased and then increased with increasing annealing temperature from 600 K to 1073 K for the sample implanted He ions to a dose of 3 x 10(16) cm(-2), where numerous helium bubbles were formed in the damaged layer. The TEM results suggest that the growth of helium bubbles emits interstitials upon annealing. These interstitials agglomerate into stacking faults and dislocation loops, which increase the hardness. (C) 2014 Elsevier B.V. All rights reserved. |
| URL标识 | 查看原文 |
| WOS关键词 | HELIUM IMPLANTATION ; TEMPERATURE ; DAMAGE ; INDENTATION ; ACTIVATION ; CARBON ; IONS |
| 资助项目 | National Basic Research Program of China (973 program)[2010 CB832904] |
| WOS研究方向 | Materials Science ; Nuclear Science & Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:000348003600024 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/14980]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 近代物理研究所_先进核能材料研究室（ADS） |
| 作者单位 | 中国科学院近代物理研究所 |
| 推荐引用方式 GB/T 7714 | Wei, KF,Wang, J,Song, P,et al. Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC[J]. JOURNAL OF NUCLEAR MATERIALS,2014,455(1-3):116-121. |
| APA | Wei, KF.,Wang, J.,Song, P.,Pang, LL.,Zhu, YB.,...&Yao, CF.(2014).Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC.JOURNAL OF NUCLEAR MATERIALS,455(1-3),116-121. |
| MLA | Wei, KF,et al."Evolution of strain and mechanical properties upon annealing in He-implanted 6H-SiC".JOURNAL OF NUCLEAR MATERIALS 455.1-3(2014):116-121. |
入库方式： OAI收割
来源：近代物理研究所
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