Surface damage on 6H-SiC by highly-charged Xeq+ ions irradiation
文献类型：期刊论文
| 作者 | Song, Y ; Ma, YZ; Li, JY; Gou, J; Yang, YT; Li, JJ; Xu, CL; Han, LH; Zhang, CH; Zhang, LQ
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| 刊名 | JOURNAL OF NUCLEAR MATERIALS
 |
| 出版日期 | 2014 |
| 卷号 | 455期号:1-3页码:704-709 |
| ISSN号 | 0022-3115 |
| DOI | 10.1016/j.jnucmat.2014.08.001 |
| 英文摘要 | Surface damage on 6H-SiC irradiated by highly-charged Xeq+ (q = 18, 26) ions to different fiuences in two geometries was studied by means of AFM, Raman scattering spectroscopy and FTIR spectrometry. The FTIR spectra analysis shows that for Xe26+ ions irradiation at normal incidence, a deep reflection dip appears at about 930 cm(-1). Moreover, the reflectance on top of reststrahlen band decreases as the ion fluence increases, and the reflectance at tilted incidence is larger than that at normal incidence. The Raman scattering spectra reveal that for Xe26+ ions at normal incidence, surface reconstruction occurs and amorphous stoichiometric SiC and Si-Si and C-C bonds are generated and original Si-C vibrational mode disappears. And the intensity of scattering peaks decreases with increasing dose. The AFM measurement shows that the surface swells after irradiation. With increasing ion fluence, the step height between the irradiated and the unirradiated region increases for Xe18+ ions irradiation; while for Xe-26+ ions irradiation, the step height first increases and then decreases with increasing ion fluence. Moreover, the step height at normal incidence is higher than that at tilted incidence by the irradiation with Xe18+ to the same ion fluence. A good agreement between the results from the three methods is found. (C) 2014 Elsevier B.V. All rights reserved. |
| URL标识 | 查看原文 |
| WOS关键词 | HELIUM IMPLANTATION ; SILICON-CARBIDE ; RAMAN-SCATTERING ; BOMBARDMENT ; FILMS |
| 资助项目 | National Basic Research Program of China[2010CB832904] |
| WOS研究方向 | Materials Science ; Nuclear Science & Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:000348003600134 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/14983]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 |
| 作者单位 | 中国科学院近代物理研究所 |
| 推荐引用方式 GB/T 7714 | Song, Y,Ma, YZ,Li, JY,et al. Surface damage on 6H-SiC by highly-charged Xeq+ ions irradiation[J]. JOURNAL OF NUCLEAR MATERIALS,2014,455(1-3):704-709. |
| APA | Song, Y.,Ma, YZ.,Li, JY.,Gou, J.,Yang, YT.,...&Zhang, LQ.(2014).Surface damage on 6H-SiC by highly-charged Xeq+ ions irradiation.JOURNAL OF NUCLEAR MATERIALS,455(1-3),704-709. |
| MLA | Song, Y,et al."Surface damage on 6H-SiC by highly-charged Xeq+ ions irradiation".JOURNAL OF NUCLEAR MATERIALS 455.1-3(2014):704-709. |
入库方式： OAI收割
来源：近代物理研究所
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