The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes
文献类型：期刊论文
| 作者 | Wang, LX ; Gou, J; Zhang, CH; Zhang, LQ; Song, Y; Lu, ZW; Yang, YT; Li, HX; Meng, YC; Li, JJ
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2014 |
| 卷号 | 339期号:339页码:20-25 |
| 关键词 | Au/GaN Schottky contact Swift heavy ions I-V C-V Interface state |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2014.08.014 |
| 英文摘要 | The I-V and C-V characteristics of Au/n-GaN Schottky diodes irradiated with 290-MeV U-238(32+) ions are presented. The U ions can penetrate the n-type GaN epi-layer with a thickness about 3 mu m grown on the c-plane of a sapphire substrate using the MOCVD technique, leaving a purely electronic energy deposition. The Au/n-GaN Schottky diodes were irradiated to successively increasing fluences from 1 x 10(9) to 5 x 10(11) ions cm(-2). The measured I-V curves show that the height of the Schottky barrier decreases after irradiation and that the Schottky barrier almost disappears when the ion fluence reaches 5 x 10(9) ions cm(-2). Meanwhile, the irradiation increases the series resistance. The C-V curves show that the capacitance drops sharply when the ion fluence reaches 5 x 10(10) ions cm(-2). The dielectric constant also decreases following the irradiation. The changes of the electrical properties are ascribed to the neutralization of the donor-like surface state and the acceptor-like surface state due to the migration of Au atoms at the interface of Au/n-GaN under energetic U ions irradiations. (C) 2014 Elsevier B.V. All rights reserved. |
| URL标识 | 查看原文 |
| WOS关键词 | GROWN GALLIUM NITRIDE ; SWIFT HEAVY-IONS ; DAMAGE ; ZNO |
| 资助项目 | National Key Basic Research and Development Program of China[2010CB832904] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000343785500004 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/14984]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 近代物理研究所_电源室 |
| 作者单位 | 中国科学院近代物理研究所 |
| 推荐引用方式 GB/T 7714 | Wang, LX,Gou, J,Zhang, CH,et al. The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2014,339(339):20-25. |
| APA | Wang, LX.,Gou, J.,Zhang, CH.,Zhang, LQ.,Song, Y.,...&Li, JJ.(2014).The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,339(339),20-25. |
| MLA | Wang, LX,et al."The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 339.339(2014):20-25. |
入库方式： OAI收割
来源：近代物理研究所
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