Effects of irradiation of 290 MeV U-ions in GaN epi-layers
文献类型：期刊论文
| 作者 | Li, HX ; Gou, J; Zhang, LQ; Zhang, CH; Song, Y; Yang, YT; Li, JJ; Meng, YC
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2013 |
| 卷号 | 307期号:307页码:89-92 |
| DOI | 10.1016/j.nimb.2013.01.086 |
| 英文摘要 | In the present work, the resistivity, mobility and the carrier density at either room temperature or 77 K in 3-mu m-thick n-GaN epi-layers irradiated with 290 MeV U-238(32+) ions were tested with Hall measurements. It is found that the carrier mobility at 77 K is lower than that at room temperature in the specimens irradiated to fluences of the 1 x 10(9) and 1 x 10(19) ions/cm(2), showing a behavior different from the pristine specimen. The carrier density increases with ion fluence, and is above the dopant concentration when the ion fluence reaches 5 x 10(19) ions/cm(2). Moreover, the ionized impurity scattering plays a dominant role in the Hall effect after irradiation. A decrease of the ionized impurities due to the recombination of Ga vacancies (V-Ga(-3)) and the Ga interstitials (Ga(l)) was observed. The irradiation to the fluence of 5 x 10(10) ions/cm(2) produced N vacancies, which act as a kind of donor making the carrier density increase. The Raman spectra show that the E-2 (high) mode shifts to a higher frequency meanwhile the FWTH increases after the irradiation, indicating there is an increase of strain in the irradiated GaN epi-layers. A consistency between the Raman spectra and the HRXRD spectra was found. (C) 2013 Elsevier B.V. All rights reserved. |
| URL标识 | 查看原文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000321722200021 |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/14994]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 |
| 作者单位 | 中国科学院近代物理研究所 |
| 推荐引用方式 GB/T 7714 | Li, HX,Gou, J,Zhang, LQ,et al. Effects of irradiation of 290 MeV U-ions in GaN epi-layers[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,307(307):89-92. |
| APA | Li, HX.,Gou, J.,Zhang, LQ.,Zhang, CH.,Song, Y.,...&Meng, YC.(2013).Effects of irradiation of 290 MeV U-ions in GaN epi-layers.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,307(307),89-92. |
| MLA | Li, HX,et al."Effects of irradiation of 290 MeV U-ions in GaN epi-layers".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 307.307(2013):89-92. |
入库方式： OAI收割
来源：近代物理研究所
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