Structural damage in InGaN induced by MeV heavy ion irradiation
文献类型：期刊论文
| 作者 | Zhang, L. M.1; Zhang, C. H.3; Wang, T. S.1; Zhao, J. T.1; Hu, P.1; Fadanelli, R. C.2 |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2015-08-01 |
| 卷号 | 356期号:356页码:53-56 |
| 关键词 | InGaN Ion irradiation Structural damage |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2015.04.065 |
| 英文摘要 | In0.18Ga0.82N films were irradiated with 4 MeV Kr-84 and 8.9 MeV Bi-209 ions to various fluences at room temperature. The irradiated films were analyzed by means of Rutherford backscattering/channeling (RBS/C) and high resolution X-ray diffraction (HRXRD). The RBS/C measurements show that under the irradiation conditions, the relative lattice disorder in the films, obtained from the normalized backscattering yield, exhibits a rapid increase in the range from similar to 2% to 68%. There is also an increasing lattice expansion of the films with increasing ion fluence, as determined by the HRXRD measurements. At a comparable level of lattice disorder, the Kr irradiation leads to a more pronounced lattice expansion than the Bi irradiation. This may be attributed to a larger portion of the single interstitials in the films produced by the lighter Kr ion irradiation. (C) 2015 Elsevier B.V. All rights reserved. |
| WOS关键词 | GAN ; IMPLANTATION ; AMORPHIZATION ; BOMBARDMENT ; NITRIDES |
| 资助项目 | National Natural Science Foundation of China[11305081] ; China Scholarship Council |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000356990400009 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China ; China Scholarship Council |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/14975]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Zhang, L. M. |
| 作者单位 | 1.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China 2.Univ Fed Rio Grande do Sul, Inst Fis, BR-91500 Porto Alegre, RS, Brazil 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, L. M.,Zhang, C. H.,Wang, T. S.,et al. Structural damage in InGaN induced by MeV heavy ion irradiation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2015,356(356):53-56. |
| APA | Zhang, L. M.,Zhang, C. H.,Wang, T. S.,Zhao, J. T.,Hu, P.,&Fadanelli, R. C..(2015).Structural damage in InGaN induced by MeV heavy ion irradiation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,356(356),53-56. |
| MLA | Zhang, L. M.,et al."Structural damage in InGaN induced by MeV heavy ion irradiation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 356.356(2015):53-56. |
入库方式： OAI收割
来源：近代物理研究所
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