Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si
文献类型：期刊论文
| 作者 | Zhong, YR3; Li, BS1 ; Wang, BY3; Qin, XB3; Zhang, LQ1; Yang, YT1; Wang, R2; Jin, YF1; Zhang, CH1; Wang, ZG1
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| 刊名 | VACUUM
 |
| 出版日期 | 2013 |
| 卷号 | 93期号:93页码:22-27 |
| 关键词 | Ion implantation Oxide precipitates Si-O stretching band Vacancy-type defects Microstructures |
| ISSN号 | 0042-207X |
| DOI | 10.1016/j.vacuum.2012.11.018 |
| 英文摘要 | The effects of the processing conditions on the formation of buried oxide precipitates in He and O co-implanted Si were investigated by the combination of Fourier transform infrared (FTIR) absorption spectroscopy, depth-resolved positron annihilation Doppler spectroscopy, and transmission electron microscopy (TEM). Silicon wafers were implanted with 50 keV He ions at a fluence of 2 x 10(16) cm(-2) and subsequent 150 key O ions at a fluence of 2 x 10(17) cm(-2). For comparison, reference Si wafers were only implanted with 150 keV O ions. The Si-O-Si stretching frequency increases while the peak width of the Si-O-Si stretching absorption band decreases with an increase in annealing temperature. After the same annealing, the peak width of the Si-O-Si stretching absorption band in the He and O co-implanted sample is significantly larger than that in the reference sample. Two kinds of vacancy-type defects are observed by positrons, i.e., vacancy-type defects and vacancy-oxygen complexes. The characteristic S values of vacancy-type defects and vacancy-type complexes in the He and O co-implanted sample are smaller than those of the reference sample. In addition, the thickness of the buried oxide layer in the He and O co-implanted sample is smaller than that in the reference sample. After annealing at 1473 K, the O content is larger in the He and O co-implanted sample compared to that in the reference sample. (C) 2012 Elsevier Ltd. All rights reserved. |
| URL标识 | 查看原文 |
| WOS关键词 | OXYGEN IMPLANTATION ; INFRARED-SPECTROSCOPY ; SIMOX STRUCTURES ; SILICON DIOXIDE ; ENERGY ; INSULATOR ; FILMS ; SEPARATION ; CAVITIES ; DEFECTS |
| 资助项目 | National Natural Science Foundation of China[10575124] ; National Natural Science Foundation of China[11505130] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000316092900004 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/14997]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 近代物理研究所_先进核能材料研究室（ADS） |
| 作者单位 | 1.中国科学院近代物理研究所 2.北京师范大学 3.中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhong, YR,Li, BS,Wang, BY,et al. Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si[J]. VACUUM,2013,93(93):22-27. |
| APA | Zhong, YR.,Li, BS.,Wang, BY.,Qin, XB.,Zhang, LQ.,...&Wang, ZG.(2013).Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si.VACUUM,93(93),22-27. |
| MLA | Zhong, YR,et al."Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si".VACUUM 93.93(2013):22-27. |
入库方式： OAI收割
来源：近代物理研究所
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