Study of radiation damage in InGaN and AlGaN films induced by 8.9 MeV Bi33+ ions
文献类型：期刊论文
| 作者 | Zhang, CH2 ; Zhang, LM1; Li, CX1; Zhao, JT1; Yang, KJ1; Zhang, GF1; Wang, TS1
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2013 |
| 卷号 | 305期号:305页码:1-4 |
| 关键词 | InGaN AlGaN Ion irradiation RBS/C Raman |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2013.04.042 |
| 英文摘要 | Homogeneous radiation damage was induced in similar to 250-nm-thick In0.18Ga0.82N and Al0.2Ga0.8N films by irradiation with 8.9 MeV Bi33+ ions at room temperature. The ion fluence was in the range from 5 x 10(11) to 5 x 10(13) cm(-2). From the Rutherford backscattering/channeling (RBS/C) measurements, it is shown that Al0.2Ga0.8N had a radiation resistance at least one order of magnitude higher than In0.18Ga0.82N. When the ion fluence was increased from 1 x 10(13) to 5 x 10(13) cm(-2), enhanced surface peaks were observed in the RBS/C spectra for both the In0.18Ga0.82N and Al0.2Ga0.8N films, which may be attributed to the high charge state of the incident ions. Moreover, from the Raman spectra measurements, the evolution of the disorder-related B1 bands and TO-like peaks with the fluence was observed for the In0.18Ga0.82N and Al0.2Ga0.8N films, respectively. (C) 2013 Elsevier B.V. All rights reserved. |
| URL标识 | 查看原文 |
| WOS关键词 | HEAVY-IONS ; IMPLANTATION ; GAN ; NITRIDES ; DISORDER |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000320897800001 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/14998]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 |
| 作者单位 | 1.兰州大学 2.中国科学院近代物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhang, CH,Zhang, LM,Li, CX,et al. Study of radiation damage in InGaN and AlGaN films induced by 8.9 MeV Bi33+ ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,305(305):1-4. |
| APA | Zhang, CH.,Zhang, LM.,Li, CX.,Zhao, JT.,Yang, KJ.,...&Wang, TS.(2013).Study of radiation damage in InGaN and AlGaN films induced by 8.9 MeV Bi33+ ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,305(305),1-4. |
| MLA | Zhang, CH,et al."Study of radiation damage in InGaN and AlGaN films induced by 8.9 MeV Bi33+ ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 305.305(2013):1-4. |
入库方式： OAI收割
来源：近代物理研究所
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