中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Annealing effects on the photoluminescence of Pb-ion irradiated He-doped sapphire

文献类型:期刊论文

作者Yang, YT2; Li, JJ2; Song, Y1; Zhang, CH2; Gou, J2; He, DY1; Zhang, LQ2
刊名SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
出版日期2012
卷号55期号:10页码:1803-1807
关键词ion irradiation Al2O3 PL spectra
ISSN号1674-7348
DOI10.1007/s11433-012-4855-x
英文摘要In the present work, the photoluminescence (PL) character of single crystal sapphire (Al2O3) samples with and without implantation by 110 keV He and/or irradiation by 230-MeV Pb ions, as well as subsequently annealing at 600, 900 and 1100 K (T (A)) was studied. The modification of the structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra. The PL measurements showed that luminescence peaks located at 390, 413, 450, and 564 nm appeared in irradiated samples. The luminescence peaks appeared at 360, 380, and 516 nm after annealing. Infrared spectra showed a broadening of the absorption band between 460 cm(-1) and 510 cm(-1), which indicated the formation of strongly damaged regions in the Al2O3 samples. The position shift of the absorption band in 1000-1300 cm(-1) tended towards to a higher wavelength.
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WOS关键词IMPLANTED SAPPHIRE ; AL2O3 ; ALPHA-AL2O3 ; ABSORPTION ; SPECTRA ; DAMAGE
资助项目National Natural Science Foundation of China[10705037] ; National Natural Science Foundation of China[10975165]
WOS研究方向Physics
语种英语
WOS记录号WOS:000308953800012
出版者SCIENCE PRESS
源URL[http://ir.impcas.ac.cn/handle/113462/15000]  
专题近代物理研究所_能源材料研究组
近代物理研究所_材料研究中心
作者单位1.兰州大学
2.中国科学院近代物理研究所
推荐引用方式
GB/T 7714
Yang, YT,Li, JJ,Song, Y,et al. Annealing effects on the photoluminescence of Pb-ion irradiated He-doped sapphire[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2012,55(10):1803-1807.
APA Yang, YT.,Li, JJ.,Song, Y.,Zhang, CH.,Gou, J.,...&Zhang, LQ.(2012).Annealing effects on the photoluminescence of Pb-ion irradiated He-doped sapphire.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,55(10),1803-1807.
MLA Yang, YT,et al."Annealing effects on the photoluminescence of Pb-ion irradiated He-doped sapphire".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 55.10(2012):1803-1807.

入库方式: OAI收割

来源:近代物理研究所

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