Annealing effects on the photoluminescence of Pb-ion irradiated He-doped sapphire
文献类型:期刊论文
作者 | Yang, YT2![]() ![]() ![]() ![]() |
刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
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出版日期 | 2012 |
卷号 | 55期号:10页码:1803-1807 |
关键词 | ion irradiation Al2O3 PL spectra |
ISSN号 | 1674-7348 |
DOI | 10.1007/s11433-012-4855-x |
英文摘要 | In the present work, the photoluminescence (PL) character of single crystal sapphire (Al2O3) samples with and without implantation by 110 keV He and/or irradiation by 230-MeV Pb ions, as well as subsequently annealing at 600, 900 and 1100 K (T (A)) was studied. The modification of the structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra. The PL measurements showed that luminescence peaks located at 390, 413, 450, and 564 nm appeared in irradiated samples. The luminescence peaks appeared at 360, 380, and 516 nm after annealing. Infrared spectra showed a broadening of the absorption band between 460 cm(-1) and 510 cm(-1), which indicated the formation of strongly damaged regions in the Al2O3 samples. The position shift of the absorption band in 1000-1300 cm(-1) tended towards to a higher wavelength. |
URL标识 | 查看原文 |
WOS关键词 | IMPLANTED SAPPHIRE ; AL2O3 ; ALPHA-AL2O3 ; ABSORPTION ; SPECTRA ; DAMAGE |
资助项目 | National Natural Science Foundation of China[10705037] ; National Natural Science Foundation of China[10975165] |
WOS研究方向 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000308953800012 |
出版者 | SCIENCE PRESS |
源URL | [http://ir.impcas.ac.cn/handle/113462/15000] ![]() |
专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 |
作者单位 | 1.兰州大学 2.中国科学院近代物理研究所 |
推荐引用方式 GB/T 7714 | Yang, YT,Li, JJ,Song, Y,et al. Annealing effects on the photoluminescence of Pb-ion irradiated He-doped sapphire[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2012,55(10):1803-1807. |
APA | Yang, YT.,Li, JJ.,Song, Y.,Zhang, CH.,Gou, J.,...&Zhang, LQ.(2012).Annealing effects on the photoluminescence of Pb-ion irradiated He-doped sapphire.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,55(10),1803-1807. |
MLA | Yang, YT,et al."Annealing effects on the photoluminescence of Pb-ion irradiated He-doped sapphire".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 55.10(2012):1803-1807. |
入库方式: OAI收割
来源:近代物理研究所
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