中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Surface morphological and compositional changes of GaN films induced by swift heavy-ion irradiations

文献类型:期刊论文

作者Zhang, CH1; Song, Y1; Jin, YF1; Zhang, LM2; Wang, TS2; Li, CX2
刊名EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
出版日期2012
卷号59期号:3
ISSN号1286-0042
DOI10.1051/epjap/2012120221
英文摘要Wurtzite GaN films irradiated at room temperature with 308 MeV Xe-129(35+) or 230 MeV Pb-208(27+) ions have been studied by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The three-dimensional AFM images showed that swellings of the GaN films were caused by the ion irradiations at very low fluences. In comparison with the Xe ions, the Pb ions led to a much more pronounced swelling. The XPS results indicated that after the Xe and Pb irradiations, the contents of Ga and N dangling bonds in the GaN increased, and the contents of Ga-O and N-O bonds in the surface layer also increased. In the case of the Pb irradiation, a peak associated with the defect of interstitial N was detected in the N 1s core-level spectrum, implying the formation of N-2 bubbles close to the GaN surface. However, no homonuclear Ga-Ga bond was found according to the related Ga 3d spectrum. The dramatic experimental results are discussed and the distinct difference of irradiation damages in GaN induced individually by the Xe and Pb ions is analyzed.
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WOS关键词EPITAXIAL LAYERS ; IMPLANTED GAN ; METALS ; SEMICONDUCTORS ; FABRICATION
资助项目National Science Foundation of China (NSFC)[10979063]
WOS研究方向Physics
语种英语
出版者EDP SCIENCES S A
WOS记录号WOS:000310575500001
源URL[http://ir.impcas.ac.cn/handle/113462/15002]  
专题近代物理研究所_能源材料研究组
近代物理研究所_材料研究中心
作者单位1.中国科学院近代物理研究所
2.兰州大学
推荐引用方式
GB/T 7714
Zhang, CH,Song, Y,Jin, YF,et al. Surface morphological and compositional changes of GaN films induced by swift heavy-ion irradiations[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2012,59(3).
APA Zhang, CH,Song, Y,Jin, YF,Zhang, LM,Wang, TS,&Li, CX.(2012).Surface morphological and compositional changes of GaN films induced by swift heavy-ion irradiations.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,59(3).
MLA Zhang, CH,et al."Surface morphological and compositional changes of GaN films induced by swift heavy-ion irradiations".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 59.3(2012).

入库方式: OAI收割

来源:近代物理研究所

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