The effects of Xe irradiation on He and H co-implanted Si
文献类型：期刊论文
| 作者 | Zhang, CH ; Li, BS; Yang, YT
|
| 刊名 | RADIATION EFFECTS AND DEFECTS IN SOLIDS
 |
| 出版日期 | 2012 |
| 卷号 | 167期号:3页码:212-219 |
| 关键词 | H and He co-implantation Xe irradiation platelet strong electronic excitation |
| ISSN号 | 1042-0150 |
| DOI | 10.1080/10420150.2011.629319 |
| 英文摘要 | A combination of X-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and Raman spectroscopy was used to study the effects of irradiation with swift heavy ions on helium and hydrogen co-implanted silicon. < 100 >-oriented silicon wafers were co-implanted with 30 keV helium to a dose of 3 x 10(16) He+/cm(2) and 24 keV protons to a dose of 2 x 10(16) H+/cm(2). Moreover, selected helium and hydrogen co-implanted Si wafers were irradiated with 94 MeV xenon. After He and H co-implantation and Xe-irradiation, the wafers were annealed at a temperature of 673K for 30 min. The damage region of the wafers was examined by the XTEM analysis. The results reveal that most of the platelets are aligned parallel to the (100) plane in the He and H co-implanted Si. However, majority of the platelets lie in {111} planes after Xe irradiation. Blisters do not occur on the sample surface after Xe irradiation. Raman results reveal that the intensities of both SiH2 and V2H6 modes increase with the increase in the dose of Xe. A possible explanation is that strong electronic excitation during Xe irradiation produces annealing effect, which reduces both lattice damage and the out-of-plane tensile strain. |
| URL标识 | 查看原文 |
| WOS关键词 | INDUCED EXFOLIATION ; INDUCED PLATELETS ; SILICON ; HYDROGEN ; MECHANISM ; CRYSTALLIZATION ; COIMPLANTATION ; COMPLEXES |
| 资助项目 | National Basic Research Program of China[2010 CB832904] |
| WOS研究方向 | Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000300852100009 |
| 出版者 | TAYLOR & FRANCIS LTD |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/15006]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 近代物理研究所_先进核能材料研究室（ADS） |
| 作者单位 | 中国科学院近代物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhang, CH,Li, BS,Yang, YT. The effects of Xe irradiation on He and H co-implanted Si[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,2012,167(3):212-219. |
| APA | Zhang, CH,Li, BS,&Yang, YT.(2012).The effects of Xe irradiation on He and H co-implanted Si.RADIATION EFFECTS AND DEFECTS IN SOLIDS,167(3),212-219. |
| MLA | Zhang, CH,et al."The effects of Xe irradiation on He and H co-implanted Si".RADIATION EFFECTS AND DEFECTS IN SOLIDS 167.3(2012):212-219. |
入库方式： OAI收割
来源：近代物理研究所
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