Study of the damage produced in 6H-SiC by He irradiation
文献类型：期刊论文
| 作者 | Li, B. S.2; Yang, Y. T.2; Shibayama, T.1; Zhang, H. H.3; Zhang, C. H.2 |
| 刊名 | VACUUM
 |
| 出版日期 | 2011-11-11 |
| 卷号 | 86期号:4页码:452-456 |
| 关键词 | tie irradiation 6H-SiC Annealing Lattice damage |
| ISSN号 | 0042-207X |
| DOI | 10.1016/j.vacuum.2011.09.011 |
| 英文摘要 | Lattice damage and evolution in 6H-SiC under He ion irradiation have been investigated by the combination of Rutherford backscattering in channeling geometry (RBS/C), Raman spectroscopy, UV visible spectroscopy and transmission electron microscopy (TEM). 6H-SiC wafers were irradiated with He ions at a fluence of 3 x 10(16) He(+)cm(-2) at 600 K. Post-irradiation, the samples were annealed in vacuum at different temperatures from 873 K to 1473 K for isochronal annealing (30 min). Thermally annealed He irradiated 6H-SiC exhibited an increase in damage or reverse annealing behavior in the damage peak region. The reverse annealing effect was found due to the nucleation and growth of He bubbles. This finding was consistent with the TEM observation. The thermal annealing brought some recovery of lattice defects and therefore the intensities of Raman peaks increased and the absorption coefficient decreased with increasing annealing temperature. The intensity of Raman peak at 789 cm(-1) as a function of annealing temperature was fitted in terms of a thermally activated process which yielded activation energy of 0.172 +/- 0.003 eV. (C) 2011 Elsevier Ltd. All rights reserved. |
| WOS关键词 | SILICON-CARBIDE ; OPTICAL-PROPERTIES ; IMPLANTATION ; SPECTROSCOPY ; TEMPERATURE ; CARBON |
| 资助项目 | National Natural Science Foundation of China[10979063] ; National Natural Science Foundation of China[11005130] ; National Basic Research Program of China[2010 CB832904] ; State Key Laboratory of Nuclear Physics and Technology, Peking University |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000298212000018 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Natural Science Foundation of China ; National Basic Research Program of China ; State Key Laboratory of Nuclear Physics and Technology, Peking University |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/15008]  |
| 专题 | 近代物理研究所_能源材料研究组 |
| 通讯作者 | Li, B. S. |
| 作者单位 | 1.Hokkaido Univ, Ctr Adv Res Energy Technol, Sapporo, Hokkaido 0608628, Japan 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Jiangxi Sci & Technol Normal Univ, Jiangxi Key Lab Surface & Engn, Nanchang 330013, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, B. S.,Yang, Y. T.,Shibayama, T.,et al. Study of the damage produced in 6H-SiC by He irradiation[J]. VACUUM,2011,86(4):452-456. |
| APA | Li, B. S.,Yang, Y. T.,Shibayama, T.,Zhang, H. H.,&Zhang, C. H..(2011).Study of the damage produced in 6H-SiC by He irradiation.VACUUM,86(4),452-456. |
| MLA | Li, B. S.,et al."Study of the damage produced in 6H-SiC by He irradiation".VACUUM 86.4(2011):452-456. |
入库方式： OAI收割
来源：近代物理研究所
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