中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 近代物理研究所
  3. 中国科学院近代物理研究所
  4. 能源材料研究组
Mechanical Properties and Defect Evolution of Kr-Implanted 6H-SiC

文献类型：期刊论文

作者Zhang Li-Qing1; Yang Yi-Tao1; Jia Xiu-Jun1; Liu Xiang-Bing2; Huang Ping2; Wang Rong-Shan2; Xu Chao-Liang1,2; Zhang Chong-Hong1; Zhang Yong1
刊名CHINESE PHYSICS LETTERS
出版日期2011-10-01
卷号28期号:10页码:4
ISSN号0256-307X
DOI10.1088/0256-307X/28/10/106103
英文摘要Specimens of silicon carbide (6H-SiC) were irradiated with 5 MeV Kr ions ((84)Kr(19+)) for three fluences of 5x10(13), 2x10(14) and 1x10(15) ions/cm(2), and subsequently annealed at room temperature, 500 degrees C, 700 degrees C and 1000 degrees C, respectively. The strain of the specimens was investigated with high resolution XRD and different defect evolution processes are revealed. An interpretation of the defect evolution and migration is given to explain the strain variation. The mechanical properties of the specimens were studied by using a nano-indentation technique in continuous stiffness measurement (CSM) mode with a diamond Berkovich indenter. For specimens irradiated with fluences of 5x10(13) or 2x10(14) ions/cm(2), hardness values exceed that of un-implanted SiC. However, hardness sharply degrades for specimens irradiated with the highest fluence of 1x10(15) ions/cm(2). The specimens with fluences of 5x10(13) and 2x10(14) ions/cm(2) and subsequently annealed at 700 degrees C and 500 degrees C, respectively, show the maximum hardness value.
WOS关键词HELIUM IMPLANTATION ; POINT-DEFECTS ; ENERGY ; IONS ; MICROSTRUCTURE ; TEMPERATURE
资助项目National Natural Science Foundation of China[10575124] ; National Natural Science Foundation of China[10979063] ; National Basic Research Program of China[2010CB832904]
WOS研究方向Physics
语种英语
WOS记录号WOS:000295975100046
出版者IOP PUBLISHING LTD
资助机构National Natural Science Foundation of China ; National Basic Research Program of China
源URL[http://ir.impcas.ac.cn/handle/113462/15010]  
专题近代物理研究所_能源材料研究组
近代物理研究所_材料研究中心
通讯作者Xu Chao-Liang
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Suzhou Nucl Power Res Inst, Suzhou 215004, Peoples R China
推荐引用方式
GB/T 7714		 Zhang Li-Qing,Yang Yi-Tao,Jia Xiu-Jun,et al. Mechanical Properties and Defect Evolution of Kr-Implanted 6H-SiC[J]. CHINESE PHYSICS LETTERS,2011,28(10):4.
APA Zhang Li-Qing.,Yang Yi-Tao.,Jia Xiu-Jun.,Liu Xiang-Bing.,Huang Ping.,...&Zhang Yong.(2011).Mechanical Properties and Defect Evolution of Kr-Implanted 6H-SiC.CHINESE PHYSICS LETTERS,28(10),4.
MLA Zhang Li-Qing,et al."Mechanical Properties and Defect Evolution of Kr-Implanted 6H-SiC".CHINESE PHYSICS LETTERS 28.10(2011):4.

入库方式： OAI收割

来源：近代物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。