Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions
文献类型：期刊论文
| 作者 | Li, B. S.3; Zhang, L. M.2,3; Zhang, C. H.3; Zhang, L. Q.3; Jia, X. J.3; Ma, T. D.1; Song, Y.3 ; Yang, Y. T.3; Jin, Y. F.3
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 出版日期 | 2011-08-01 |
| 卷号 | 269期号:15页码:1782-1785 |
| 关键词 | GaN Ion irradiation AFM HRXRD Raman scattering PL |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2011.04.118 |
| 英文摘要 | Wurtzite GaN epilayers irradiated at room temperature with 308 MeV (129)Xe(35+) ions to fluences of 1 x 10(13) and 3 x 10(13) cm(-2) have been studied by contact mode atomic force microscopy (AFM), high-resolution X-ray diffraction (HRXRD), micro-Raman scattering and photoluminescence (PL) spectroscopy. The AFM images showed that the surface of GaN films was etched efficiently due to the Xe ion irradiation. The initial step-terrace structure on GaN surface was eliminated completely at a fluence of 3 x 10(13) cm(-2). HRXRD and Raman results indicated that the Xe ion irradiation led to a homogenous lattice expansion throughout the entire similar to 3 mu m-thick GaN films. The lattice expansion as well as the biaxial compressive stress of the films was increasing with the increase of ion fluence. PL measurements showed that a dominant yellow luminescence band in the as-grown GaN films disappeared, but a blue and a green luminescence bands were produced after irradiation. Based on these results, the strong electronic excitation effect of 308 MeV Xe ions in GaN is discussed. (C) 2011 Elsevier B.V. All rights reserved. |
| WOS关键词 | SWIFT HEAVY-IONS ; GALLIUM NITRIDE ; DOPED GAN ; PHOTOLUMINESCENCE ; LUMINESCENCE ; METALS ; TRACKS ; STRAIN ; BAND |
| 资助项目 | National Science Foundation of China (NSFC)[10979063] ; National Science Foundation of China (NSFC)[50872013] ; Fundamental Research Funds for the Central Universities[lzujbky-2010-159] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000292431800005 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Science Foundation of China (NSFC) ; Fundamental Research Funds for the Central Universities |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/15012]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China 2.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, B. S.,Zhang, L. M.,Zhang, C. H.,et al. Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2011,269(15):1782-1785. |
| APA | Li, B. S..,Zhang, L. M..,Zhang, C. H..,Zhang, L. Q..,Jia, X. J..,...&Jin, Y. F..(2011).Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,269(15),1782-1785. |
| MLA | Li, B. S.,et al."Structural and optical study of irradiation effect in GaN epilayers induced by 308 MeV Xe ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 269.15(2011):1782-1785. |
入库方式： OAI收割
来源：近代物理研究所
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