Annealing ambient on the evolution of He-induced voids in silicon
文献类型：期刊论文
| 作者 | Zhang, C. H.1; Zhang, L. Q.1; Zhang, H. H.3; Zhang, Y.3; Han, L. H.3; Zhou, L. H.3; Wang, D. N.2; Zhong, Y. R.2; Li, B. S.1,3; Yang, Y. T.1,3 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2011-06-01 |
| 卷号 | 257期号:16页码:7036-7040 |
| 关键词 | Silicon Positron annihilation Void Annealing ambient TEM |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2011.02.125 |
| 英文摘要 | The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening spectroscopy using a variable-energy positron beam and cross-section transmission electron microscopy (XTEM). A < 1 0 0 >-oriented silicon wafer was implanted with He ions at an energy of 15 keV to a dose of 2 x 10(16) cm(-2) at room temperature. Post-implantation, the samples were annealed at a temperature of 1000 degrees C in the ambient of vacuum, argon, nitrogen, air and oxygen. Positron annihilation spectroscopy (PAS) spectra varied with the annealing ambient. XTEM micrographs demonstrated that the density of He-induced voids could be influenced by the annealing ambient. (C) 2011 Elsevier B.V. All rights reserved. |
| WOS关键词 | POSITRON ANNIHILATION SPECTROSCOPY ; VACANCY CLUSTERS ; INDUCED CAVITIES ; SI ; HELIUM ; OXYGEN ; BEAM ; DEFECTS ; IMPLANTATION ; TEMPERATURE |
| 资助项目 | National Natural Science Foundation of China[10979063] ; National Natural Science Foundation of China[11015130] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000290015600003 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/15013]  |
| 专题 | 近代物理研究所_能源材料研究组 |
| 通讯作者 | Li, B. S. |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China 3.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, C. H.,Zhang, L. Q.,Zhang, H. H.,et al. Annealing ambient on the evolution of He-induced voids in silicon[J]. APPLIED SURFACE SCIENCE,2011,257(16):7036-7040. |
| APA | Zhang, C. H..,Zhang, L. Q..,Zhang, H. H..,Zhang, Y..,Han, L. H..,...&Yang, Y. T..(2011).Annealing ambient on the evolution of He-induced voids in silicon.APPLIED SURFACE SCIENCE,257(16),7036-7040. |
| MLA | Zhang, C. H.,et al."Annealing ambient on the evolution of He-induced voids in silicon".APPLIED SURFACE SCIENCE 257.16(2011):7036-7040. |
入库方式： OAI收割
来源：近代物理研究所
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