HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions
文献类型：期刊论文
| 作者 | Jia, X. J.2; Zhang, L. Q.2; Jin, Y. F.2; Zhang, Y.2 ; Han, L. H.2; Zhang, L. M.1,2; Zhang, C. H.2; Xu, C. L.2
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 出版日期 | 2011-05-15 |
| 卷号 | 269期号:10页码:1063-1066 |
| 关键词 | InGaN Ion irradiation HRXRD Raman scattering |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2011.03.003 |
| 英文摘要 | In(0.15)Ga(0.83)N/GaN bilayers irradiated with 2.3 MeV Ne and 5.3 MeV Kr ions at room temperature were studied by high-resolution X-ray diffraction (HRXRD) and micro-Raman scattering. The Ne ion fluences were in the range from 1 x 10(12) to 1 x 10(15) cm(-2), and the Kr ion fluences were in the range from 1 x 10(11) to 1 x 10(13) cm(-2). Results show that the structures of both In(0.15)Ga(0.85)N and GaN layers remained almost unchanged for increasing fluences up to 1 x 10(13) and 1 x 10(12) cm(-2) for Ne and Kr ion irradiations, respectively. After irradiation to higher fluences, the GaN layer was divided into several damaged layers with different extents of lattice expansion, while the In(0.15)Ga(0.83)N layer exhibited homogenous lattice expansion. The layered structure of GaN and the different responses to irradiation of the GaN and In(0.15)Ga(0.85)N layers are discussed. (C) 2011 Elsevier B.V. All rights reserved. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; IMPLANTED GAN ; GALLIUM NITRIDE ; HEAVY-IONS ; DAMAGE ; SCATTERING ; INXGA1-XN ; ALLOYS |
| 资助项目 | National Natural Science Foundation of China[10979063] ; Fundamental Research Funds for the Central Universities[lzujbky-2010-159] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000291181300005 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/15014]  |
| 专题 | 近代物理研究所_能源材料研究组 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jia, X. J.,Zhang, L. Q.,Jin, Y. F.,et al. HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2011,269(10):1063-1066. |
| APA | Jia, X. J..,Zhang, L. Q..,Jin, Y. F..,Zhang, Y..,Han, L. H..,...&Xu, C. L..(2011).HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,269(10),1063-1066. |
| MLA | Jia, X. J.,et al."HRXRD and Raman study of irradiation effects in InGaN/GaN layers induced by 2.3 MeV Ne and 5.3 MeV Kr ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 269.10(2011):1063-1066. |
入库方式： OAI收割
来源：近代物理研究所
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