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Precipitates and defects in silicon co-implanted with helium and oxygen

文献类型：期刊论文

作者Zhang, Y.2; Yang, Y. T.2; Zhang, L. Q.2; Li, B. S.2; Zhang, C. H.2; Zhang, H. H.1
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2011-04-15
卷号269期号:8页码:739-744
关键词Ion implantation SIMOX Vacancy-type defects Precipitates TEM
ISSN号0168-583X
DOI10.1016/j.nimb.2011.02.005
英文摘要Nano-bubbles or voids introduced by He implantation before the oxygen implantation collect oxygen and increase the oxygen content in the sample. Furthermore, nano-bubbles or voids can trap Si interstitials to decrease the dislocations at the edge of precipitates. The density and shape of precipitates formed in the initial stage of the separation-by-implanted-oxygen process are related to the size and density of He-induced vacancy-type defects (nano-bubbles and voids). A high density of nano-bubbles is more efficient in gettering than that of a low density of voids. (C) 2011 Elsevier B.V. All rights reserved.
WOS关键词BURIED OXIDE ; SIMOX ; ENERGY ; VOIDS ; LAYER ; SI
资助项目National Natural Science Foundation of China[11015130] ; National Natural Science Foundation of China[10979063] ; 973 program[2010CB832904] ; Key Laboratory of Beam Opening Foundation, Beijing Normal University, China
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000289538400005
出版者ELSEVIER SCIENCE BV
资助机构National Natural Science Foundation of China ; 973 program ; Key Laboratory of Beam Opening Foundation, Beijing Normal University, China
源URL[http://ir.impcas.ac.cn/handle/113462/15015]  
专题近代物理研究所_能源材料研究组
通讯作者Li, B. S.
作者单位1.Jiangxi Sci & Technol Normal Univ, Jiangxi Key Lab Surface & Engn, Nanchang 330013, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Zhang, Y.,Yang, Y. T.,Zhang, L. Q.,et al. Precipitates and defects in silicon co-implanted with helium and oxygen[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2011,269(8):739-744.
APA Zhang, Y.,Yang, Y. T.,Zhang, L. Q.,Li, B. S.,Zhang, C. H.,&Zhang, H. H..(2011).Precipitates and defects in silicon co-implanted with helium and oxygen.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,269(8),739-744.
MLA Zhang, Y.,et al."Precipitates and defects in silicon co-implanted with helium and oxygen".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 269.8(2011):739-744.

入库方式： OAI收割

来源：近代物理研究所

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