Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions
文献类型：期刊论文
| 作者 | Han, L. H.; Zhang, L. Q.; Zhang, C. H.; Yang, Y. T.; Jin, Y. F.; Sun, Y. M.; Song, S. J.; Li, B. S. |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2011-02-01 |
| 卷号 | 269期号:3页码:396-399 |
| 关键词 | Highly charged ions Potential energy Surface erosion AFM Gallium nitride (GaN) |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2010.11.043 |
| 英文摘要 | In the present work the erosion behavior on the surface of GaN epi-layer by the impact of various slow highly charged heavy ions (SHCIs, including Arq+. Xeq+ and Pbq+, in two incidence geometries) was investigated. Atomic force microscopy reveals a well-defined threshold of potential energy carried by the incident heavy ions accounting for the surface erosion. This threshold also depends on the projected range of the SHCIs, the longer the projected range, the higher the potential energy required for the onset of surface erosion. And the etched depth is close to a linear function of potential energy deposited, increasing with the potential energy increases. Moreover, the etching rate for 60 degrees off normal incidence is by more than a factor of 2 larger than etching rate for normal incidence, and the etch rate by Xeq+ is larger than by Pbq+ under the same potential energy and incident direction. And a mechanism is discussed. (C) 2010 Elsevier B.V. All rights reserved. |
| WOS关键词 | NANO-HILLOCK FORMATION ; THROUGH-WAFER ; GAAS MMICS ; HOLES ; BOMBARDMENT ; FABRICATION ; INSULATOR ; DEFECTS ; DEVICES |
| 资助项目 | National Natural Science Foundation of China[10575124] ; National Natural Science Foundation of China[10979063] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000293037000032 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://ir.impcas.ac.cn/handle/113462/15016]  |
| 专题 | 近代物理研究所_能源材料研究组 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, L. H.,Zhang, L. Q.,Zhang, C. H.,et al. Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2011,269(3):396-399. |
| APA | Han, L. H..,Zhang, L. Q..,Zhang, C. H..,Yang, Y. T..,Jin, Y. F..,...&Li, B. S..(2011).Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,269(3),396-399. |
| MLA | Han, L. H.,et al."Potential energy threshold of surface erosion on GaN by impact of slow highly charged heavy ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 269.3(2011):396-399. |
入库方式： OAI收割
来源：近代物理研究所
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