Microstructural defects in He-irradiated polycrystalline alpha-SiC at 1000 degrees C
文献类型：期刊论文
| 作者 | Li, Bingsheng2 ; Han, Wentuo1
|
| 刊名 | JOURNAL OF NUCLEAR MATERIALS
 |
| 出版日期 | 2018-06-01 |
| 卷号 | 504页码:161-165 |
| 关键词 | Silicon carbide He irradiation Microstructure Grain boundaries Stacking faults |
| ISSN号 | 0022-3115 |
| DOI | 10.1016/j.jnucmat.2018.03.038 |
| 英文摘要 | In order to investigate the effect of the high-temperature irradiation on microstructural evolutions of the polycrystalline SiC, an ion irradiation at 1000 degrees C with the 500 keV He2+ was imposed to the alpha-SiC. The platelets, He bubbles, dislocation loops, and particularly, their interaction with the stacking fault and grain boundaries were focused on and characterized by the cross-sectional transmission electron microscopy (XTEM). The platelets expectably exhibit a dominant plane of (0001), while planes of (01-10) and (10-16) are also found. Inside the platelet, the over-pressurized bubbles exist and remarkably cause a strong-strain zone surrounding the platelet. The disparate roles between the grain boundaries and stacking faults in interacting with the bubbles and loops are found. The results are compared with the previous weighty findings and discussed. (C) 2018 Elsevier B.V. All rights reserved. |
| WOS关键词 | HELIUM IMPLANTATION ; EVOLUTION ; COMPOSITES |
| 资助项目 | National Nature Science Foundation of China[11475229] |
| WOS研究方向 | Materials Science ; Nuclear Science & Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:000430050900019 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Nature Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/24431]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Li, Bingsheng |
| 作者单位 | 1.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Bingsheng,Han, Wentuo. Microstructural defects in He-irradiated polycrystalline alpha-SiC at 1000 degrees C[J]. JOURNAL OF NUCLEAR MATERIALS,2018,504:161-165. |
| APA | Li, Bingsheng,&Han, Wentuo.(2018).Microstructural defects in He-irradiated polycrystalline alpha-SiC at 1000 degrees C.JOURNAL OF NUCLEAR MATERIALS,504,161-165. |
| MLA | Li, Bingsheng,et al."Microstructural defects in He-irradiated polycrystalline alpha-SiC at 1000 degrees C".JOURNAL OF NUCLEAR MATERIALS 504(2018):161-165. |
入库方式： OAI收割
来源：近代物理研究所
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