Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation
文献类型：期刊论文
| 作者 | Xian, Y. Q.1,2; Zhang, L. Q.1,2; Li, J. Y.2; Su, C. H.1,2; Chen, Y. G.1,2; Yan, T. X.1,2; Ding, Z. N.2; Liu, H. P.2; Liu, J.1,2 ; Zhang, C. H.2
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| 刊名 | APPLIED SURFACE SCIENCE
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| 出版日期 | 2018-05-15 |
| 卷号 | 440页码:814-820 |
| 关键词 | GaN Highly-charged bismuth-ion irradiation Raman spectrum Varying temperature photoluminescence (PL) spectrum Optoelectric properties |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2018.01.170 |
| 英文摘要 | N-type gallium nitride (GaN) epitaxial layers were subjected to 990-keV Bi33+ ions irradiation to various fluences. Optoelectric properties of the irradiated-GaN specimens were studied by means of Raman scattering and variable temperature photoluminescence (PL) spectroscopy. Raman spectra reveal that both the free-carrier concentration and its mobility generally decrease with a successive increase in ion fluence. Electro-optic mechanisms dominated the electrical transport to a fluence of 1.061 x 10(12) Bi33+/cm(2). Above this fluence, electrical properties were governed by the deformation potential. The appearance of vacancy-type defects results in an abrupt degradation in electrical transports. Varying temperature photoluminescence (PL) spectra display that all emission lines of 1.061 x 10(12) Bi33+/cm(2)-irradiated specimen present a general remarkable thermal redshift, quenching, and broadening, including donorbound- exciton peak, yellow luminescence band, and LO-phonon replicas. Moreover, as the temperature rises, a transformation from excitons (donor-acceptor pairs' luminescence) to band-to-band transitions (donor-acceptor combinations) was found, and the shrinkage effect of the band gap dominated the shift of the peak position gradually, especially the temperature increases above 150 K. In contrast to the un-irradiated specimen, a sensitive temperature dependence of all photoluminescence (PL) lines' intensity obtained from 1.061 x 10(12) Bi33+/cm(2)-irradiated specimen was found. Mechanisms underlying were discussed. (C) 2018 Elsevier B. V. All rights reserved. |
| WOS关键词 | BLOCK-COPOLYMER LITHOGRAPHY ; RAMAN-SCATTERING ; YELLOW LUMINESCENCE ; LO-PHONON ; EPITAXIAL LAYERS ; FILMS ; SEMICONDUCTORS ; DEPOSITION ; RESONANCE ; RADIATION |
| 资助项目 | National Natural Science Foundation of China[11675231] ; National Natural Science Foundation of China[91426304] ; National Natural Science Foundation of China[11105191] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000427461000095 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/24440]  |
| 专题 | 近代物理研究所_能源材料研究组 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, 509 Nan Chang Rd, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xian, Y. Q.,Zhang, L. Q.,Li, J. Y.,et al. Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation[J]. APPLIED SURFACE SCIENCE,2018,440:814-820. |
| APA | Xian, Y. Q..,Zhang, L. Q..,Li, J. Y..,Su, C. H..,Chen, Y. G..,...&Zhang, C. H..(2018).Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation.APPLIED SURFACE SCIENCE,440,814-820. |
| MLA | Xian, Y. Q.,et al."Degradation mechanisms of optoelectric properties of GaN via highly-charged Bi-209(33+) ions irradiation".APPLIED SURFACE SCIENCE 440(2018):814-820. |
入库方式： OAI收割
来源：近代物理研究所
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