Surface morphology of GaN bombarded by highly charged Xe-126(q+) ions
文献类型：期刊论文
| 作者 | Sun You-Mei ; Zhao Zhi-Ming; Li Bing-Sheng; Song Shu-Jian; Zhang Li-Qing; Zhang Chong-Hong; Yang Yi-Tao; Yao Cun-Feng
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2009-08-01 |
| 卷号 | 58页码:5578-5584 |
| 关键词 | highly charged ion GaN atomic force microscopy surface morphology |
| ISSN号 | 1000-3290 |
| 英文摘要 | N-type GaN films bombarded with different highly charged Xe-126(q+)-ions(9 <= q <= 30) at room temperature was studied by atomic force microscopy. The experimental results show that when q exceeds the threshold value 18, remarkable swelling turns into obvious erosion in the irradiated area. On the other hand, surface disorder of GaN films strongly depends on the charge state q of ions, incident angle and ion influence, and the damage behavior of films is unrelated to the kinetic energy within the scope of experimental parameters (180 keV <= E-k <= 600 keV). For q = 18, the surface morphology of the films almost does hot change at normal incidence, and at incidence angle of 30 degrees relative to the film surface, there appears small-scale swelling in irradiated region and a low step forms between the irradiated and un-irradiated regions. For q < 18, the film surface is capped with an amorphous layer, with increased roughness, distinct swelling. Moreover, especially at and near the boundaries, a series of remarkable sharp bumps like ridges are observed. And an evident step-up is formed between the irradiated and un-irradiated regions. The step is more remarkable for tilted incidence than normal incidence. For q > 18, film surface is etched, forming a deep dump with a high step with the increase of ions influence. Unambiguous indentations relevant to the ion influence on the step appear. Furthermore, the step height is proportional to the ion influence approximately and is much higher for tilted incidence than normal incidence. |
| WOS关键词 | GALLIUM NITRIDE ; IMPLANTED GAN ; DISORDER ; DEFECTS ; DAMAGE ; IRRADIATION ; NITROGEN ; FILMS ; MG ; SI |
| 资助项目 | National Natural Science Foundation of China[10575124] ; Chinese Academy of Sicences ; Director's Foundation of Institute of Modem Physics |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000269228600069 |
| 出版者 | CHINESE PHYSICAL SOC |
| 资助机构 | National Natural Science Foundation of China ; Chinese Academy of Sicences ; Director's Foundation of Institute of Modem Physics |
| 源URL | [http://119.78.100.186/handle/113462/30577]  |
| 专题 | 近代物理研究所_材料研究中心 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Zhang Li-Qing |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun You-Mei,Zhao Zhi-Ming,Li Bing-Sheng,et al. Surface morphology of GaN bombarded by highly charged Xe-126(q+) ions[J]. ACTA PHYSICA SINICA,2009,58:5578-5584. |
| APA | Sun You-Mei.,Zhao Zhi-Ming.,Li Bing-Sheng.,Song Shu-Jian.,Zhang Li-Qing.,...&Yao Cun-Feng.(2009).Surface morphology of GaN bombarded by highly charged Xe-126(q+) ions.ACTA PHYSICA SINICA,58,5578-5584. |
| MLA | Sun You-Mei,et al."Surface morphology of GaN bombarded by highly charged Xe-126(q+) ions".ACTA PHYSICA SINICA 58(2009):5578-5584. |
入库方式： OAI收割
来源：近代物理研究所
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