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Raman investigation of incident N-, Xe-ions induced effects in ZnO thin films

文献类型：期刊论文

作者Zhu Yabin1,2; Ma Yizhun1,2; Shen Tielong1,2; Yao Cunfeng1,2; Sun Jianrong1; Wei Kongfang1; Zang Hang1,2; Wang Zhiguang1,2; Pang Lilong1,2
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2011-05-01
卷号269页码:837-841
关键词ZnO films Ions implantation/irradiation Raman spectra
ISSN号0168-583X
DOI10.1016/j.nimb.2010.12.084
英文摘要Highly c-axis orientation ZnO thin films with hundreds nanometers in thickness have been deposited on (1 0 0) Si substrate by RF magnetron sputtering. These films are implanted at room temperature by 80 key N-ions with fluences from 5.0 x 10(14) to 1.0 x 10(17) ions/cm(2), implanted by 400 keV Xe-ions with 2.0 X 10(14) to 2.0 x 10(16) ions/cm(2), irradiated by 3.64 MeV Xe-ions with 1.0 x 10(12) to 1.0 x 10(15) ions/cm(2), or irradiated by 308 MeV Xe-ions with 1.0 x 10(12) to 5.0 x 10(14) ions/cm(2), respectively. Then the ZnO films are investigated using a Raman spectroscopy. The obtained Raman spectra show that a new Raman peak located at about 578 cm(-1) relating to simple defects or disorder phase appears in all ZnO films after ion implantation/irradiation, a new Raman peak at about 275 cm(-1) owing to N-activated zinc-like vibrations is observed in the N-implanted samples. Moreover, a new Raman peak at about 475 cm(-1) is only seen in the samples after 400 key and 3.64 MeV Xe-ions bombardment. The area intensity of these peaks increases with increasing ion fluence. The effects of ion fluence, element chemical activity, atom displacements induced by nuclear collisions as well as energy deposition on the damage process of ZnO films under ion implantation/irradiation are discussed briefly. (C) 2011 Elsevier B.V. All rights reserved.
WOS关键词IMPLANTED ZNO ; ZINC-OXIDE ; NITROGEN ; DEFECTS ; MODES
资助项目National Basic Research Program of China[2010CB832902] ; National Natural Science Foundation of China[10835010] ; Chinese Academy of Sciences[KJCX2-VW-M11]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000290191800010
出版者ELSEVIER SCIENCE BV
资助机构National Basic Research Program of China ; National Natural Science Foundation of China ; Chinese Academy of Sciences
源URL[http://119.78.100.186/handle/113462/33547]  
专题近代物理研究所_先进核能材料研究室（ADS）
通讯作者Wang Zhiguang
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 73000, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714		 Zhu Yabin,Ma Yizhun,Shen Tielong,et al. Raman investigation of incident N-, Xe-ions induced effects in ZnO thin films[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2011,269:837-841.
APA Zhu Yabin.,Ma Yizhun.,Shen Tielong.,Yao Cunfeng.,Sun Jianrong.,...&Pang Lilong.(2011).Raman investigation of incident N-, Xe-ions induced effects in ZnO thin films.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,269,837-841.
MLA Zhu Yabin,et al."Raman investigation of incident N-, Xe-ions induced effects in ZnO thin films".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 269(2011):837-841.

入库方式： OAI收割

来源：近代物理研究所

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