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Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations

文献类型：期刊论文

作者Liu Chun-Bao1,2; Wang Zhi-Guang2
刊名CHINESE PHYSICS C
出版日期2011-09-01
卷号35页码:885-889
ISSN号1674-1137
关键词swift heavy ion irradiation C-doped SiO2 Raman spectroscopy
DOI10.1088/1674-1137/35/9/019
英文摘要Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0x10(17) or 1.2x10(18) ions/cm(2). These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0x10(11), 1.0x10(12), 5.0x10(12) ions/cm(2), or with 308 MeV Xe-ions to 1.0x10(12), 1.0x10(13), 1.0x10(14) ions/cm(2), respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si C bonds and sp(2) carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO2 under swift heavy ion irradiations was briefly discussed.
WOS关键词SILICON-CARBIDE FILMS ; VISIBLE PHOTOLUMINESCENCE ; THERMAL SIO2-FILMS ; AMORPHOUS-CARBON ; SI ; LUMINESCENCE
资助项目NSFC[10475102] ; Scientific Research Foundation of Heze University, China[XY09WL02] ; Heze University Doctoral Foundation[XY10BS02]
WOS研究方向Physics
语种英语
出版者CHINESE PHYSICAL SOC
WOS记录号WOS:000294793600019
资助机构NSFC ; Scientific Research Foundation of Heze University, China ; Heze University Doctoral Foundation
源URL[http://119.78.100.186/handle/113462/34099]  
专题近代物理研究所_先进核能材料研究室（ADS）
通讯作者Liu Chun-Bao
作者单位1.Heze Univ, Dept Phys, Heze 274015, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Liu Chun-Bao,Wang Zhi-Guang. Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations[J]. CHINESE PHYSICS C,2011,35:885-889.
APA Liu Chun-Bao,&Wang Zhi-Guang.(2011).Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations.CHINESE PHYSICS C,35,885-889.
MLA Liu Chun-Bao,et al."Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations".CHINESE PHYSICS C 35(2011):885-889.

入库方式： OAI收割

来源：近代物理研究所

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