EPR studies on defect production and its annealing behavior in silicon after high fluence Ar ion irradiation
文献类型：期刊论文
| 作者 | Cheng, S; Zhu, ZY; Wang, ZG ; Sun, YM; Jin, YF; Li, CL; Liu, CL; Hou, MD
|
| 刊名 | HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
 |
| 出版日期 | 1998-07-01 |
| 卷号 | 22页码:651-657 |
| 关键词 | Ar ion irradiation defect production Electron Paramagnetic Resonance isochronal annealing |
| ISSN号 | 0254-3052 |
| 英文摘要 | Silicon samples were irradiated below 50K with 112MeV Ar ions to a fluence of 8 x 10(14)/cm(2). Defect production and its isochronal annealing behavior have been investigated at room temperature by Electron Paramagnetic Resonance technique. Neutral 4-vacancy (Si-P3 center), positively charged [100] splitted di-interstitial (Si-P6 center) and the continuous amorphous layer have been detected in the as-irradiated sample. At an annealing temperature of 200 degrees C, the Si-P3 and Si-P6 centers were annealed out and five vacancy cluster in negative charge state (Si-P1 center) began to grow. The Si-P1 center disappeared at about 550 degrees C. For the temperature above 350 degrees C, Si-Al1 center (a center may include several vacancies) has been observed, which was stable up to 550 degrees C. The temperatue for recrystallization of the continuous amorphous layer is higher than 600 degrees C. During the annealing process, the line shape and line width for amorphous center were not changed. The results are qualitatively discussed. |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000075441900011 |
| 出版者 | SCIENCE PRESS |
| 源URL | [http://119.78.100.186/handle/113462/35659]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Liu, CL |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cheng, S,Zhu, ZY,Wang, ZG,et al. EPR studies on defect production and its annealing behavior in silicon after high fluence Ar ion irradiation[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,1998,22:651-657. |
| APA | Cheng, S.,Zhu, ZY.,Wang, ZG.,Sun, YM.,Jin, YF.,...&Hou, MD.(1998).EPR studies on defect production and its annealing behavior in silicon after high fluence Ar ion irradiation.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,22,651-657. |
| MLA | Cheng, S,et al."EPR studies on defect production and its annealing behavior in silicon after high fluence Ar ion irradiation".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 22(1998):651-657. |
入库方式： OAI收割
来源：近代物理研究所
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