中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Irradiation effects of graphene and thin layer graphite induced by swift heavy ions

文献类型:期刊论文

作者Sun You-Mei1; Zhai Peng-Fei1; Yao Hui-Jun1; Zhang Sheng-Xia1,2; Liu Jie1; Zeng Jian1; Guo Hang1,2; Hou Ming-Dong1; Duan Jing-Lai1
刊名CHINESE PHYSICS B
出版日期2015-08-01
卷号24页码:7
关键词graphene thin graphite films swift heavy ions irradiation effect
ISSN号1674-1056
DOI10.1088/1674-1056/24/8/086103
英文摘要Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions (Bi-209, 9.5 MeV/u) with the fluences in a range of 10(11) ions/cm(2)-10(12) ions/cm(2) at room temperature. Both pristine and irradiated samples are investigated by Raman spectroscopy. For pristine graphite films, the "blue shift" of 2D bond and the "red shift" of G bond with the decrease of thickness are found in the Raman spectra. For both irradiated graphene and thin graphite films, the disorder-induced D peak and D 0 peak are detected at the fluence above a threshold Phi(th). The thinner the film, the lower the Phi(th) is. In this work, the graphite films thicker than 60 nm reveal defect free via the absence of a D bond signal under the swift heavy ion irradiation till the fluence of 2.6 x 10(12) ions/cm(2). For graphite films thinner than 6 nm, the area ratios between D peak and G peak increase sharply with reducing film thickness. It concludes that it is much easier to induce defects in thinner films than in thicker ones by swift heavy ions. The intensities of the D peak and D' peak increase with increasing ion fluence, which predicts the continuous impacting of swift heavy ions can lead to the increasing of defects in samples. Different defect types are detected in graphite films of different thickness values. The main defect types are discussed via the various intensity ratios between the D peak and D' peak (H-D/H-D').
WOS关键词RAMAN-SPECTROSCOPY ; SINGLE-LAYER ; DEFECTS ; CRYSTALS
资助项目National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[10975164] ; National Natural Science Foundation of China[10805062] ; National Natural Science Foundation of China[11005134] ; National Natural Science Foundation of China[11275237]
WOS研究方向Physics
语种英语
WOS记录号WOS:000361906000052
出版者IOP PUBLISHING LTD
资助机构National Natural Science Foundation of China
源URL[http://119.78.100.186/handle/113462/40790]  
专题近代物理研究所_材料研究中心
通讯作者Liu Jie
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Sun You-Mei,Zhai Peng-Fei,Yao Hui-Jun,et al. Irradiation effects of graphene and thin layer graphite induced by swift heavy ions[J]. CHINESE PHYSICS B,2015,24:7.
APA Sun You-Mei.,Zhai Peng-Fei.,Yao Hui-Jun.,Zhang Sheng-Xia.,Liu Jie.,...&Duan Jing-Lai.(2015).Irradiation effects of graphene and thin layer graphite induced by swift heavy ions.CHINESE PHYSICS B,24,7.
MLA Sun You-Mei,et al."Irradiation effects of graphene and thin layer graphite induced by swift heavy ions".CHINESE PHYSICS B 24(2015):7.

入库方式: OAI收割

来源:近代物理研究所

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