Micro-Raman spectroscopy characterization of silicon with different structures irradiated with energetic Bi-ions
文献类型：期刊论文
| 作者 | Wang, Dong1,2; Gao, Xing2; Shen, Tielong2; Wei, Kongfang2; Sheng, Yanbin1,2 ; Zhu, Yabin2; Wang, Ji1,2; Yao, Cunfeng2; Zhu, Huiping1,2; Sun, Jianrong2
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 出版日期 | 2015-12-15 |
| 卷号 | 365页码:123-127 |
| 关键词 | Heavy-ion irradiation Silicon Raman spectra Microstructure |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2015.08.041 |
| 英文摘要 | Researches of irradiation effects on silicon possess not only fundamental interests but also potential application prospects. Comparison studies about structural modification of silicon materials with different structures under identical irradiation conditions can reveal the irradiation mechanisms for amorphous and crystalline phases of silicon. For this purpose, amorphous silicon (a-Si) and nano-crystalline silicon (nc-Si) films as well as mono-crystalline silicon (c-Si) samples were irradiated with 6.0 MeV Biions at room temperature. The ion fluences are 1.0 x 10(13), 5.0 x 10(13) and 1.0 x 10(14) ions/cm(2). All samples were analyzed by using a Raman spectrometer. The obtained results show that the crystalline fraction of c-Si and nc-Si decrease with increasing fluence, which indicates that the irradiation induces the amorphization of nc-Si and c-Si samples. In addition, the variation in Raman frequency of crystalline peak after irradiation reveals that the irradiation also results in the increased stress in crystalline phase of c-Si and nc-Si samples. As the fluence increases, the bond angle deviation and the ratio of TA to TO mode of amorphous network of a-Si and nc-Si films initially increase and then decrease by a diminishing degree, while the bond angle deviation and the ratio of TA to TO mode of amorphous network of c-Si samples increase continuously. This gives the dependence of short-range structural order of amorphous network of a-Si, nc-Si and c-Si samples on the ion fluence, which is related with the irradiation induced variation of local free energy. It is considered that the irradiation induced structural modification of silicon samples is mainly attributed to the nuclear energy loss. The irradiation effects of energetic heavy-ions on crystalline and amorphous phases of silicon have been discussed, respectively. (C) 2015 Elsevier B.V. All rights reserved. |
| WOS关键词 | BAND-GAP ; FILMS |
| 资助项目 | National Natural Science Foundation of China (NSFC)[10835010] ; National Natural Science Foundation of China (NSFC)[91026002] ; National Natural Science Foundation of China (NSFC)[11105190] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000366786900028 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China (NSFC) |
| 源URL | [http://119.78.100.186/handle/113462/41268]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Zhu, Yabin |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Dong,Gao, Xing,Shen, Tielong,et al. Micro-Raman spectroscopy characterization of silicon with different structures irradiated with energetic Bi-ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2015,365:123-127. |
| APA | Wang, Dong.,Gao, Xing.,Shen, Tielong.,Wei, Kongfang.,Sheng, Yanbin.,...&Wang, Zhiguang.(2015).Micro-Raman spectroscopy characterization of silicon with different structures irradiated with energetic Bi-ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,365,123-127. |
| MLA | Wang, Dong,et al."Micro-Raman spectroscopy characterization of silicon with different structures irradiated with energetic Bi-ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 365(2015):123-127. |
入库方式： OAI收割
来源：近代物理研究所
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