Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures
文献类型：期刊论文
| 作者 | Zang, Hang1; Wang, Zhiguang2 ; Yun, Di1; He, Chaohui1; Li, Tao1; Kurtz, Richard J.3; Henager, Charles H., Jr.3; Edwards, Danny J.3; Devaraj, Arun3; Liu, Wenbo1
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 出版日期 | 2016-12-15 |
| 卷号 | 389页码:40-47 |
| 关键词 | He and Kr cavities Vacancy effect High-temperature annealing Ion irradiation 3C-SiC |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2016.11.017 |
| 英文摘要 | Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750 degrees C with 120 keV He2+ and 4 MeV Kr15+ ions to 10(17) and 4 x 10(16) cm(-2), respectively. The Kr15+ ions penetrated the entire depth region of the He2+ ion implantation. Three areas of He2+, Kr15+ and He2+ + Kr15+ ion implanted SiC were created through masked overlapping irradiation. The sample was subsequently annealed at 1600 degrees C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive X-ray spectroscopy. Compared to the He2+ ion only implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25 dpa, presence of He in the co-implanted 3C-SiC significantly promotes cavity growth; much smaller voids are formed in the Kr15+ ion only irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occurs, but long-range Kr diffusion in SiC is not observed up to 1600 degrees C. (C) 2016 Elsevier B.V. All rights reserved. |
| WOS关键词 | CUBIC SILICON-CARBIDE ; HELIUM IMPLANTATION ; AG DIFFUSION ; DEGREES-C ; ION ; EVOLUTION ; BEHAVIOR ; DEFECTS ; ENERGY |
| 资助项目 | China Scholarship Council ; National Natural Science Foundation of China[11405124] ; U.S. DOE Office of Fusion Energy Sciences[DE-AC05-76RL01830] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000390745700008 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | China Scholarship Council ; National Natural Science Foundation of China ; U.S. DOE Office of Fusion Energy Sciences |
| 源URL | [http://119.78.100.186/handle/113462/44032]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Zang, Hang; Jiang, Weilin |
| 作者单位 | 1.Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian 710049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Pacific Northwest Natl Lab, Richland, WA 99352 USA |
| 推荐引用方式 GB/T 7714 | Zang, Hang,Wang, Zhiguang,Yun, Di,et al. Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2016,389:40-47. |
| APA | Zang, Hang.,Wang, Zhiguang.,Yun, Di.,He, Chaohui.,Li, Tao.,...&Jiang, Weilin.(2016).Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,389,40-47. |
| MLA | Zang, Hang,et al."Vacancy effects on the formation of He and Kr cavities in 3C-SiC irradiated and annealed at elevated temperatures".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 389(2016):40-47. |
入库方式： OAI收割
来源：近代物理研究所
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