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H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC

文献类型：期刊论文

作者Liu, Chao1,3; Han, Yi1,3; Li, Bing-Sheng1; Wang, Zhi-Guang1; Peng, Jin-Xin2; Sun, Jian-Rong1; Wei, Kong-Fang1; Yao, Cun-Feng1; Gao, Ning1; Gao, Xing1
刊名CHINESE PHYSICS LETTERS
出版日期2017
卷号34页码:4
ISSN号0256-307X
DOI10.1088/0256-307X/34/1/012801
英文摘要Radiation-induced defect annealing in He+ ion-implanted 4H-SiC via H+ ion irradiation is investigated by Raman spectroscopy. There are 4H-SiC wafers irradiated with 230 keV He+ ions with fluences ranging from 5.0x10(15) cm(-2) to 2.0 x 10(16) cm(-2) at room temperature. The post-implantation samples are irradiated by 260 keV H+ ions at a fluence of 5.0 x 10(15) cm(-2) at room temperature. The intensities of Raman lines decrease after He implantation, while they increase after H irradiation. The experimental results present that the magnitude of Raman line increment is related to the concentration of pre-existing defects formed by He implantation. A strong new peak located near 966 cm(-1), which is assigned to 3C-SiC LO (Gamma) phonon, is found in the He-implanted sample with a fluence of 5.0 x 10(15) cm(-2) followed by H irradiation. However, for the He-implanted sample with a fluence of 2.0 x 10(16) cm(-2) followed by H irradiation, no 3C-SiC phonon vibrations are found. The detailed reason for H irradiation-induced phase transformation in the He-implanted 4H-SiC is discussed.
WOS关键词SILICON-CARBIDE ; AMORPHIZATION ; DEFECTS
资助项目National Natural Science Foundation of China[11005130] ; National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[91026002] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDA03010301]
WOS研究方向Physics
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000394544300005
资助机构National Natural Science Foundation of China ; Strategic Priority Research Program of Chinese Academy of Sciences
源URL[http://119.78.100.186/handle/113462/44378]  
专题近代物理研究所_先进核能材料研究室（ADS）
通讯作者Li, Bing-Sheng; Wang, Zhi-Guang
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714		 Liu, Chao,Han, Yi,Li, Bing-Sheng,et al. H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC[J]. CHINESE PHYSICS LETTERS,2017,34:4.
APA Liu, Chao.,Han, Yi.,Li, Bing-Sheng.,Wang, Zhi-Guang.,Peng, Jin-Xin.,...&Ma, Zhi-Wei.(2017).H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC.CHINESE PHYSICS LETTERS,34,4.
MLA Liu, Chao,et al."H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC".CHINESE PHYSICS LETTERS 34(2017):4.

入库方式： OAI收割

来源：近代物理研究所

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