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Lattice disorder produced in GaN by He-ion implantation

文献类型：期刊论文

作者Zhang, Li2; Fang, Xuesong1,4; Zhao, Sixiang1; Jin, Jin1; Huang, Yuxuan1; Liu, Chao1; Tai, Pengfei1; Wang, Dong1,4; He, Wenhao1,4; Han, Yi1,4
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2017-09-01
卷号406页码:543-547
关键词He-ion implantation GaN Microstructure Lattice disorder Lattice strain
ISSN号0168-583X
DOI10.1016/j.nimb.2016.12.039
英文摘要The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 x 10(16), 5 x 10(16) and 1 x 10(17) cm(-2) at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffraction (HRXRD), nano-indentation, and transmission electron microscopy (TEM). The experimental results present that Raman intensity decreases with increasing fluence. Raman frequency "red shift" occurs after He-ion implantation. Strain increases with increasing fluence. The hardness of the highly damaged layer increases monotonically with increasing fluence. Microstructural results demonstrate that the width of the damage band and the number density of observed dislocation loops increases with increasing fluence. High-resolution TEM images exhibit that He-ion implantation lead to the formation of planar defects and most of the lattice defects are of interstitial-type basal loops. The relationships of Raman intensity, lattice strain, swelling and hardness with He-implantation-induced lattice disorders are discussed. (C) 2016 Elsevier B.V. All rights reserved.
WOS关键词MECHANICAL-PROPERTIES ; MICROHARDNESS ; TECHNOLOGY ; RAMAN ; AR
资助项目National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[91426301] ; National Natural Science Foundation of China[11305081]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000407659500028
出版者ELSEVIER SCIENCE BV
资助机构National Natural Science Foundation of China
源URL[http://119.78.100.186/handle/113462/45547]  
专题近代物理研究所_先进核能材料研究室（ADS）
通讯作者Li, Bingsheng
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
2.Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Gansu, Peoples R China
3.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
4.China Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714		 Zhang, Li,Fang, Xuesong,Zhao, Sixiang,et al. Lattice disorder produced in GaN by He-ion implantation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2017,406:543-547.
APA Zhang, Li.,Fang, Xuesong.,Zhao, Sixiang.,Jin, Jin.,Huang, Yuxuan.,...&Zhang, Hongpeng.(2017).Lattice disorder produced in GaN by He-ion implantation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,406,543-547.
MLA Zhang, Li,et al."Lattice disorder produced in GaN by He-ion implantation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 406(2017):543-547.

入库方式： OAI收割

来源：近代物理研究所

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