Damage produced on GaN surface by highly charged Krq+ irradiation
文献类型：期刊论文
| 作者 | Zhang, Chong-Hong2 ; Yan, Ting-Xing1,2; Ding, Zhao-Nan2; Liu, Hui-Ping2; Li, Jin-Yu2; Yang, Yi-Tao2; Zhang, Li-Qing1,2; Zhang, Heng-Qing1,2; Xu, Chao-Liang1,2
|
| 刊名 | NUCLEAR SCIENCE AND TECHNIQUES
 |
| 出版日期 | 2017-12-01 |
| 卷号 | 28页码:6 |
| 关键词 | GaN Highly charged Krypton ion AFM XPS UV-Vis transmittance spectra PL Raman spectra |
| ISSN号 | 1001-8042 |
| DOI | 10.1007/s41365-017-0326-4 |
| 英文摘要 | Surface morphology, compositions, microstructure and optical properties of GaN film irradiated by highly charged Krq+ (q = 23, 15, 11) in two geometries to a fluence of 1 x 10(15) kr(q+)/cm(2) were studied using AFM, XPS, PL, Raman scattering and UV-visible spectroscopy. The AFM observation shows that the irradiated GaN area is a swollen terrace. The swelling rate increased with the charge state (potential energy). For the same charge state, the swelling rate of tilted incidence was greater than that for normal incidence. The XPS measurements reveal that N deficiency, Ga enrichment and Ga-O and Ga dangling bonds generated on the irradiated GaN surface increased with the charge state, and more N was lost for normal incidence than that for tilted incidence. The UV-Vis results show that the transmittance decreased with increasing charge state. For the same charge state, the transmittance for tilted incidence is higher than that for normal incidence. The PL spectra present that, with increasing charge state, the YL band intensity decreased, with a blueshift in its peak position; while the NBE peak intensity increased first and then reduced, and a blue luminescence band appeared. A rapid quenching of both the YL and the NEB for normal incidence was observed. Raman spectra display that screw dislocations perhaps were produced near the surface for normal incidence. |
| WOS关键词 | YELLOW LUMINESCENCE ; RAMAN-SCATTERING ; VACANCIES ; DEFECTS |
| 资助项目 | National Natural Science Foundation of China[11675231] ; National Natural Science Foundation of China[91426304] ; National Natural Science Foundation of China[11105191] ; National Magnetic Confinement Fusion Program[2011GB108003] ; National Basic Research Program of China[2010CB832904] |
| WOS研究方向 | Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000417223300007 |
| 出版者 | SPRINGER SINGAPORE PTE LTD |
| 资助机构 | National Natural Science Foundation of China ; National Magnetic Confinement Fusion Program ; National Basic Research Program of China |
| 源URL | [http://119.78.100.186/handle/113462/46121]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, Chong-Hong |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Chong-Hong,Yan, Ting-Xing,Ding, Zhao-Nan,et al. Damage produced on GaN surface by highly charged Krq+ irradiation[J]. NUCLEAR SCIENCE AND TECHNIQUES,2017,28:6. |
| APA | Zhang, Chong-Hong.,Yan, Ting-Xing.,Ding, Zhao-Nan.,Liu, Hui-Ping.,Li, Jin-Yu.,...&Xu, Chao-Liang.(2017).Damage produced on GaN surface by highly charged Krq+ irradiation.NUCLEAR SCIENCE AND TECHNIQUES,28,6. |
| MLA | Zhang, Chong-Hong,et al."Damage produced on GaN surface by highly charged Krq+ irradiation".NUCLEAR SCIENCE AND TECHNIQUES 28(2017):6. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。