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Anomalous annealing of floating gate errors due to heavy ion irradiation

文献类型：期刊论文

作者Hou, Mingdong1; Zhao, Peixiong1,2; Luo, Jie1,2,3; Ji, Qinggang1,2; Ye, Bing1; Liu, Tianqi1,2,3; Sun, Youmei1; Liu, Jie1; Yin, Yanan1,2
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2018-03-01
卷号418页码:80-86
关键词Annealing Flash memories Heavy ions Multiple cell upsets Radiation effects
ISSN号0168-583X
DOI10.1016/j.nimb.2018.01.004
英文摘要Using the heavy ions provided by the Heavy Ion Research Facility in Lanzhou (HIRFL), the annealing of heavy ion induced floating gate (FG) errors in 34 run and 25 nm NAND Flash memories has been studied. The single event upset (SEU) cross section of FG and the evolution of the errors after irradiation depending on the ion linear energy transfer (LET) values, data pattern and feature size of the device are presented. Different rates of annealing for different ion LET and different pattern are observed in 34 nm and 25 nm memories. The variation of the percentage of different error patterns in 34 nm and 25 nm memories with annealing time shows that the annealing of FG errors induced by heavy-ion in memories will mainly take place in the cells directly hit under low LET ion exposure and other cells affected by heavy ions when the ion LET is higher. The influence of Multiple Cell Upsets (MCUs) on the annealing of FG errors is analyzed. MCUs with high error multiplicity which account for the majority of the errors can induce a large percentage of annealed errors.
WOS关键词FLASH MEMORIES ; CELLS
资助项目National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[U1532261]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000426223400012
出版者ELSEVIER SCIENCE BV
资助机构National Natural Science Foundation of China
源URL[http://119.78.100.186/handle/113462/46378]  
专题近代物理研究所_材料研究中心
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式
GB/T 7714		 Hou, Mingdong,Zhao, Peixiong,Luo, Jie,et al. Anomalous annealing of floating gate errors due to heavy ion irradiation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2018,418:80-86.
APA Hou, Mingdong.,Zhao, Peixiong.,Luo, Jie.,Ji, Qinggang.,Ye, Bing.,...&Yin, Yanan.(2018).Anomalous annealing of floating gate errors due to heavy ion irradiation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,418,80-86.
MLA Hou, Mingdong,et al."Anomalous annealing of floating gate errors due to heavy ion irradiation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 418(2018):80-86.

入库方式： OAI收割

来源：近代物理研究所

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