中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers

文献类型:期刊论文

作者Duan Jing-Lai3; Yao Hui-Jun3; Mo Dan3; Liu Jie3; Liu Jian-De3; Geng Chao2,3; Han Zheng-Sheng1; Liu Gang1; Zhao Fa-Zhan1; Sun You-Mei3
刊名CHINESE PHYSICS B
出版日期2013-09-01
卷号22
关键词Single Event Effects Energy-loss Straggling Ultra-thin Silicon Layer Monte Carlo Simulation
ISSN号1674-1056
DOI10.1088/1674-1056/22/9/096103
文献子类Article
英文摘要Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator (FDSOI) devices with ultra-thin sensitive silicon layers down to 2.5 nm. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above +/- 10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer (LET) of incident ions, and thus single event effect (SEE) responses, which pose great challenges for traditional error rate prediction methods.
WOS关键词UPSET CROSS-SECTION ; GATE LENGTH ; DEVICES
WOS研究方向Physics
语种英语
WOS记录号WOS:000325006700057
出版者IOP PUBLISHING LTD
源URL[http://119.78.100.186/handle/113462/48021]  
专题近代物理研究所_材料研究中心
通讯作者Zhang Zhan-Gang
作者单位1.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Duan Jing-Lai,Yao Hui-Jun,Mo Dan,et al. Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers[J]. CHINESE PHYSICS B,2013,22.
APA Duan Jing-Lai.,Yao Hui-Jun.,Mo Dan.,Liu Jie.,Liu Jian-De.,...&Xi Kai.(2013).Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers.CHINESE PHYSICS B,22.
MLA Duan Jing-Lai,et al."Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers".CHINESE PHYSICS B 22(2013).

入库方式: OAI收割

来源:近代物理研究所

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