Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers
文献类型:期刊论文
作者 | Duan Jing-Lai3![]() ![]() ![]() ![]() ![]() |
刊名 | CHINESE PHYSICS B
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出版日期 | 2013-09-01 |
卷号 | 22 |
关键词 | Single Event Effects Energy-loss Straggling Ultra-thin Silicon Layer Monte Carlo Simulation |
ISSN号 | 1674-1056 |
DOI | 10.1088/1674-1056/22/9/096103 |
文献子类 | Article |
英文摘要 | Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator (FDSOI) devices with ultra-thin sensitive silicon layers down to 2.5 nm. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above +/- 10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer (LET) of incident ions, and thus single event effect (SEE) responses, which pose great challenges for traditional error rate prediction methods. |
WOS关键词 | UPSET CROSS-SECTION ; GATE LENGTH ; DEVICES |
WOS研究方向 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000325006700057 |
出版者 | IOP PUBLISHING LTD |
源URL | [http://119.78.100.186/handle/113462/48021] ![]() |
专题 | 近代物理研究所_材料研究中心 |
通讯作者 | Zhang Zhan-Gang |
作者单位 | 1.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
推荐引用方式 GB/T 7714 | Duan Jing-Lai,Yao Hui-Jun,Mo Dan,et al. Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers[J]. CHINESE PHYSICS B,2013,22. |
APA | Duan Jing-Lai.,Yao Hui-Jun.,Mo Dan.,Liu Jie.,Liu Jian-De.,...&Xi Kai.(2013).Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers.CHINESE PHYSICS B,22. |
MLA | Duan Jing-Lai,et al."Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers".CHINESE PHYSICS B 22(2013). |
入库方式: OAI收割
来源:近代物理研究所
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