中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 近代物理研究所
  3. 中国科学院近代物理研究所
  4. 先进核能材料研究室（ADS）
Irradiation effects of 65 MeV Kr-ions on structure and optical band-gap of nc-Si:H films

文献类型：期刊论文

作者Zhu, Yabin2; Wang, Zhiguang2; Gao, Xing2; Sun, Jianrong2; Shen, Tielong2; Wei, Kongfang2; Pang, Lilong2; Cui, Minghuan2; Wang, Ji1,2; Zhu, Huiping1,2
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2013-11-01
卷号314页码:158-161
关键词Nc-si Film Heavy Ion irradiatIon Structure Optical Band-gap
ISSN号0168-583X
DOI10.1016/j.nimb.2013.05.032
文献子类Article
英文摘要In this paper, hydrogenated nano-crystalline silicon (nc-Si:H) films with thickness of 1.0 mu m were irradiated with 65 MeV Kr-ions, and the irradiation induced modification on structural and optical properties of the films are investigated. Characterization of the samples with X-ray diffraction shows that the average crystallite size decreases slightly from 10.9 to 9.4 nm, and the integrated intensity ratios of (2 2 0) to (1 1 1) peak and (3 1 1) to (1 1 1) peak remain nearly constant after irradiation. The Raman spectra results reveal that the crystalline fraction of the films decreases considerably from 65.6% to 10.3% and at same time the bond angle deviation of amorphous phase increases obviously from 7.7 degrees to 11.5 degrees with increasing the ion fluence. Moreover, the UV-Vis transmittance spectra results show that the optical band-gap decreases from 2.14 to 1.55 eV after irradiation. The irradiation induced atomic displacements leads to the amorphization of crystalline phase and the reduction in structural order of amorphous phase in the nc-Si:H films. The improvement of light absorption and the broadening of valence and conduction band-tails, which related to the decrease of crystalline fraction and short range order, respectively, are responsible for the reduction of optical band-gap. (C) 2013 Elsevier B.V. All rights reserved.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; SILICON THIN-FILMS ; HYDROGENATED AMORPHOUS-SILICON ; MICROSTRUCTURE
资助项目National Natural Science Foundation of China (NSFC)[10835010] ; National Natural Science Foundation of China (NSFC)[91026002] ; National Natural Science Foundation of China (NSFC)[11105190]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000326553600036
出版者ELSEVIER SCIENCE BV
源URL[http://119.78.100.186/handle/113462/48129]  
专题近代物理研究所_先进核能材料研究室（ADS）
通讯作者Wang, Zhiguang
作者单位1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Zhu, Yabin,Wang, Zhiguang,Gao, Xing,et al. Irradiation effects of 65 MeV Kr-ions on structure and optical band-gap of nc-Si:H films[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,314:158-161.
APA Zhu, Yabin.,Wang, Zhiguang.,Gao, Xing.,Sun, Jianrong.,Shen, Tielong.,...&Yao, Cunfeng.(2013).Irradiation effects of 65 MeV Kr-ions on structure and optical band-gap of nc-Si:H films.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,314,158-161.
MLA Zhu, Yabin,et al."Irradiation effects of 65 MeV Kr-ions on structure and optical band-gap of nc-Si:H films".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 314(2013):158-161.

入库方式： OAI收割

来源：近代物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。