Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation
文献类型：期刊论文
| 作者 | Liu Jie1 ; Yao Hui-Jun1; Mo Dan1; Duan Jing-Lai1; Su Hong1; Sun You-Mei1; Hou Ming-Dong1; Zhang Zhan-Gang1,2; Xi Kai1,2; Geng Chao1,2
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013-08-01 |
| 卷号 | 22 |
| 关键词 | Single Event Effects Effective Let Method Multiple-bit Upset Upset Cross Section |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/22/8/086102 |
| 文献子类 | Article |
| 英文摘要 | Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of similar to 41 MeV/(mg/cm(2)), which can be partially explained by the fact that the MBU rate for tilted ions of 30 degrees is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of similar to 9.5 MeV/(mg/cm(2)), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices. |
| WOS关键词 | CHARGE COLLECTION ; RATE PREDICTION ; CROSS-SECTIONS ; SEU ; FUTURE ; DESIGN ; ANGLES ; SRAM |
| 资助项目 | National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[10975164] ; National Natural Science Foundation of China[10805062] ; National Natural Science Foundation of China[11005134] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000324516500050 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://119.78.100.186/handle/113462/48261]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Liu Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu Jie,Yao Hui-Jun,Mo Dan,et al. Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation[J]. CHINESE PHYSICS B,2013,22. |
| APA | Liu Jie.,Yao Hui-Jun.,Mo Dan.,Duan Jing-Lai.,Su Hong.,...&Luo Jie.(2013).Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation.CHINESE PHYSICS B,22. |
| MLA | Liu Jie,et al."Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation".CHINESE PHYSICS B 22(2013). |
入库方式： OAI收割
来源：近代物理研究所
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