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Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions

文献类型：期刊论文

作者Sun, Jianrong2; Zhu, Yabin2; Wang, Zhiguang2; Wang, Dong1,2; Song, Peng1,2; Zhu, Huiping1,2; Wang, Ji1,2; Li, Yuanfei1,2; Cui, Minghuan1,2; Pang, Lilong2
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2013-07-15
卷号307页码:419-423
关键词Nc-si:h Film Ion irradiatIon Structure Optical Band-gap
ISSN号0168-583X
DOI10.1016/j.nimb.2012.11.093
文献子类Article
英文摘要In the present work, experimental results on irradiation effects of 30 and 196 MeV Kr-ions on nc-Si:H films are presented. The irradiation fluences are 5.0 x 10(13), 1.0 x 10(14) and 2.0 x 10(14) Kr-ions/cm(2), respectively. Irradiation induced modification on microstructure and optical properties of nc-Si:H films are studied by X-ray diffraction, Raman scattering and UV-Vis-NIR spectroscopy. The analyses results indicate that the irradiations lead to the decrease of crystalline fraction and crystallite size, as well as the increase of bond angle variation of amorphous network. The structural changes become more obvious with the nuclear energy loss increases. Moreover, with the ion fluence increases, the optical band-gap for samples irradiated with 30 MeV Kr-ions decreases gradually, while it for samples irradiated with 196 MeV Kr-ions decreases significantly at first and then remains nearly constant. It is considered that the irradiation induced atomic displacements in the films lead to the amorphization of crystalline phase and the decrease of short-range order in amorphous phase, and then result in the reduction of optical band-gap. (C) 2013 Elsevier B.V. All rights reserved.
WOS关键词HYDROGENATED AMORPHOUS-SILICON ; MICROSTRUCTURE ; DEPOSITION ; TRACKS ; CVD ; AR
语种英语
WOS记录号WOS:000321722200093
出版者ELSEVIER SCIENCE BV
源URL[http://119.78.100.186/handle/113462/48293]  
专题近代物理研究所_先进核能材料研究室（ADS）
通讯作者Wang, Zhiguang
作者单位1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Sun, Jianrong,Zhu, Yabin,Wang, Zhiguang,et al. Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,307:419-423.
APA Sun, Jianrong.,Zhu, Yabin.,Wang, Zhiguang.,Wang, Dong.,Song, Peng.,...&Yao, Cunfeng.(2013).Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,307,419-423.
MLA Sun, Jianrong,et al."Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 307(2013):419-423.

入库方式： OAI收割

来源：近代物理研究所

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