Modeling the applicability of linear energy transfer on single event upset occurrence
文献类型：期刊论文
| 作者 | Geng Chao1,2; Xi Kai1,2; Zhang Zhan-Gang1,2; Liu Jie2 ; Hou Ming-Dong2; Gu Song1,2; Sun You-Mei2; Duan Jing-Lai2; Yao Hui-Jun2; Mo Dan2
|
| 刊名 | CHINESE PHYSICS C
 |
| 出版日期 | 2013-06-01 |
| 卷号 | 37 |
| 关键词 | Seu Occurrence Let Ion Track Structure Energy Density |
| ISSN号 | 1674-1137 |
| DOI | 10.1088/1674-1137/37/6/066001 |
| 文献子类 | Article |
| 英文摘要 | Geant4 tools were used to model the single event upset (SEU) of static random access memory cells induced by heavy ion irradiation. Simulated results obtained in two different regions of incident ion energies have been compared in order to observe the SEU occurrence by energetic ions and their effects on the radial ionization profile of deposited energy density. The disagreement of SEU cross sections of device response and radial distribution of deposited energy density have been observed in both low energy and high energy regions with equal linear energy transfer (LET) which correspond to the both sides of the Bragg peak. In the low energy region, SEUs induced by heavy ions are more dependent upon the incident ion species and radial distribution of deposited energy density, as compared with the high energy region. In addition, the velocity effect of the incident ion in silicon in the high energy region provides valuable feedback for gaining insight into the occurrence of SEU. |
| WOS关键词 | SEU HARDENED SRAM ; HEAVY-ION ENERGY ; SIMULATION ; SILICON ; IMPACT |
| 资助项目 | National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[10975164] ; National Natural Science Foundation of China[10805062] ; National Natural Science Foundation of China[11005134] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000322937200009 |
| 出版者 | CHINESE PHYSICAL SOC |
| 源URL | [http://119.78.100.186/handle/113462/48363]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Geng Chao |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Geng Chao,Xi Kai,Zhang Zhan-Gang,et al. Modeling the applicability of linear energy transfer on single event upset occurrence[J]. CHINESE PHYSICS C,2013,37. |
| APA | Geng Chao.,Xi Kai.,Zhang Zhan-Gang.,Liu Jie.,Hou Ming-Dong.,...&Luo Jie.(2013).Modeling the applicability of linear energy transfer on single event upset occurrence.CHINESE PHYSICS C,37. |
| MLA | Geng Chao,et al."Modeling the applicability of linear energy transfer on single event upset occurrence".CHINESE PHYSICS C 37(2013). |
入库方式： OAI收割
来源：近代物理研究所
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