Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence
文献类型：期刊论文
| 作者 | Geng Chao1,2; Mo Dan1 ; Yao Hui-Jun1; Duan Jing-Lai1; Sun You-Mei1; Hou Ming-Dong1; Gu Song1,2; Zhang Zhan-Gang1,2; Xi Kai1,2; Liu Jie1
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2013-05-01 |
| 卷号 | 22 |
| 关键词 | Geant4 Multiple-bit Upset (Mbu) Critical Charge Spacing Between Adjacent Cells |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/22/5/059501 |
| 文献子类 | Article |
| 英文摘要 | We investigate the impact of heavy ion irradiation on a hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence. |
| WOS关键词 | SOFT ERROR RATE ; DEVICE SIMULATION ; NUCLEAR-REACTIONS ; CROSS-SECTION ; ION TRACKS ; SRAM ; SEU ; BULK ; SOI |
| 资助项目 | National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[10975164] ; National Natural Science Foundation of China[10805062] ; National Natural Science Foundation of China[11005134] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000319498300112 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://119.78.100.186/handle/113462/48375]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Liu Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Geng Chao,Mo Dan,Yao Hui-Jun,et al. Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence[J]. CHINESE PHYSICS B,2013,22. |
| APA | Geng Chao.,Mo Dan.,Yao Hui-Jun.,Duan Jing-Lai.,Sun You-Mei.,...&Liu Jie.(2013).Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence.CHINESE PHYSICS B,22. |
| MLA | Geng Chao,et al."Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence".CHINESE PHYSICS B 22(2013). |
入库方式： OAI收割
来源：近代物理研究所
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