Investigation of microstructure modification of C-doped a-SiO2/Si after Pb-ion irradiation
文献类型：期刊论文
| 作者 | Liu ChunBao1,2; Yao CunFeng2 ; Wang ZhiGuang2; Jin YunFan2; Toulemonde, M.3; Wei KongFang2
|
| 刊名 | SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2012-02-01 |
| 卷号 | 55页码:242-246 |
| 关键词 | Swift Heavy Ion irradiatIon C-doped Sio2 Transmission Electron Microscopy (Tem) |
| ISSN号 | 1674-7348 |
| DOI | 10.1007/s11433-011-4599-z |
| 文献子类 | Article |
| 英文摘要 | Thermally grown amorphous SiO2 (a-SiO2) films were implanted at room temperature (RT) with 100 keV C-ions to 5.0x10(17) ions/cm(2). These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x10(12) and 5.0x10(12) ions/cm(2). Then the samples were investigated using Transmission Electron Microscopy (TEM) at RT. Significant microstructure modifications were observed in C-doped a-SiO2/Si samples after high energy Pb-ion irradiations, and the formation of new structures depended strongly on the Pb-ion irradiation fluences. For example, tracks in high density were observed in a 1.0x10(12) Pb/cm(2) irradiated and C-doped sample. Additionally, the length of tracks grows, and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0x10(12) Pb/cm(2). Possible modification processes of C-doped a-SiO2 under swift heavy ion irradiations are briefly discussed. |
| WOS关键词 | OPTICAL-PROPERTIES ; IMPLANTED SIO2 ; SIO2-FILMS ; PHOTOLUMINESCENCE ; LUMINESCENCE |
| 资助项目 | Heze University Doctoral Foundation[XY10BS02] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000299295500010 |
| 出版者 | SCIENCE PRESS |
| 源URL | [http://119.78.100.186/handle/113462/49059]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Liu ChunBao |
| 作者单位 | 1.Heze Univ, Dept Phys, Heze 274015, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Ctr Interdisciplinary Res Heavy Ions, F-14070 Caen, France |
| 推荐引用方式 GB/T 7714 | Liu ChunBao,Yao CunFeng,Wang ZhiGuang,et al. Investigation of microstructure modification of C-doped a-SiO2/Si after Pb-ion irradiation[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2012,55:242-246. |
| APA | Liu ChunBao,Yao CunFeng,Wang ZhiGuang,Jin YunFan,Toulemonde, M.,&Wei KongFang.(2012).Investigation of microstructure modification of C-doped a-SiO2/Si after Pb-ion irradiation.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,55,242-246. |
| MLA | Liu ChunBao,et al."Investigation of microstructure modification of C-doped a-SiO2/Si after Pb-ion irradiation".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 55(2012):242-246. |
入库方式： OAI收割
来源：近代物理研究所
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