Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies
文献类型：期刊论文
| 作者 | Luo, Jie4 ; Yao, Huijun4; Sun, Youmei4; Xi, Kai1,4; Geng, Chao1,4; Zhao, Fazhan3; Gu, Song1,4; Liu, Tianqi1,4; Hou, Mingdong4; Liu, Jie4
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| 刊名 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE
 |
| 出版日期 | 2014-06-01 |
| 卷号 | 61页码:1459-1467 |
| 关键词 | Bragg Peak Ion Range Silicon-on-insulator Single Event Upset |
| ISSN号 | 0018-9499 |
| DOI | 10.1109/TNS.2014.2325063 |
| 文献子类 | Article |
| 英文摘要 | Experimental evidences are presented showing obvious differences in threshold ion range for silicon-on-insulator (SOI) and bulk static random access memories (SRAMs). Single event upset (SEU) cross sections of SOI SRAMs start to decline off the Weibull curve at ion ranges of 20.7 mu m to 40.6 mu m, depending on the ion species and also the thickness of metallization layers. Whereas for the bulk SRAMs, threshold range of Bismuth beam is unexpectedly larger than 60.4 mu m. Underlying mechanisms are further revealed by Monte Carlo simulations and in-depth analysis. The relative location of ion's Bragg peak to the sensitive region and also the position of ion LET in the sigma-LET curve of test device turn out to be two key parameters in determining the threshold ion range which can explain the experimental results. Significant discrepancies are observed in the deposited energy spectrums in sensitive regions of bulk SRAM by ions at different sides of the Bragg peak, but with almost the same LET at die surface (all with ion range larger than 30 mu m). Energy straggling of incident ions at the die surface is considered by Monte Carlo calculations. Implications for hardness assurance testing are also discussed. A formula is proposed for calculating the "worst case" threshold ion range. |
| WOS关键词 | MICROELECTRONICS CODE ; ENERGY ; TRANSISTORS ; REVISION ; DESIGN |
| 资助项目 | National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[10975164] ; National Natural Science Foundation of China[61204112] ; National Natural Science Foundation of China[61204116] |
| WOS研究方向 | Engineering ; Nuclear Science & Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:000337905900035 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://119.78.100.186/handle/113462/49179]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, Zhangang |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China 3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 4.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, Jie,Yao, Huijun,Sun, Youmei,et al. Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2014,61:1459-1467. |
| APA | Luo, Jie.,Yao, Huijun.,Sun, Youmei.,Xi, Kai.,Geng, Chao.,...&Duan, Jinglai.(2014).Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,61,1459-1467. |
| MLA | Luo, Jie,et al."Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 61(2014):1459-1467. |
入库方式： OAI收割
来源：近代物理研究所
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