中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Spectra study of He-irradiation induced defects in 6H-SiC

文献类型:期刊论文

作者Pang Li-Long2; Cui Ming-Huan1,2; Zhang Hong-Peng2; Li Yuan-Fei2; Wang Ji1,2; Zhu Hui-Ping1,2; Du Yang-Yang1,2; Li Bing-Sheng2; Wang Dong1,2; Song Peng1,2
刊名ACTA PHYSICA SINICA
出版日期2014-11-05
卷号63
关键词6h-sic Helium Bubbles Raman Scattering Spectra Uv-visible Transmittance Spectra
ISSN号1000-3290
DOI10.7498/aps.63.216101
文献子类Article
英文摘要Specimens of 6H-SiC were irradiated by 300keV He ions at temperatures of RT, 450, 600 and 750 degrees C with fluences ranging from 1 x 10(15) to 1 x 10(17) cm(-2). Post-irradiation, virgin and irradiated 6H-SiC specimens are measured and studied by microscopic laser confocal Raman spectrometer and UV-visible transmission apparatus. Analyses of both experimental results shown that production and recovery of defects caused by irradiation are directly related to the fluences and temperatures. Amorphization of 6H-SiC irradiated at RT occurrs, which is reflected by the disappearance of the Raman peaks and the saturation of the relative Raman intensity(simultaneously a strong Si-Si peak appears). Recovery of defects may exist in high-temperature irradiation, when helium bubbles do not exist, so that irradiation-induced defects can be easily recovered during irradiation process at elevated temperatures; but when helium bubbles are present, they can inhibit defects to recover, as shown in the trend of slopes of curves representing the relative Raman intensity and the relative absorption coefficients. This paper mainly focuses on the effects of helium bubbles on defect accumulation and recovery under the condition of high temperature irradiation, and then the comparison with the results of 6H-SiC irradiated by Si ions at elevated temperatures.
WOS关键词SILICON-CARBIDE ; ANNEALING BEHAVIOR ; OPTICAL-PROPERTIES ; ION-IMPLANTATION ; RAMAN-SPECTROSCOPY ; DAMAGE ; RECRYSTALLIZATION ; AMORPHIZATION ; ENERGY ; TEMPERATURE
资助项目National Natural Science Foundation of China[11005130] ; National Natural Science Foundation of China[11105190] ; National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[91126011]
WOS研究方向Physics
语种英语
WOS记录号WOS:000344616700038
出版者CHINESE PHYSICAL SOC
源URL[http://119.78.100.186/handle/113462/49393]  
专题近代物理研究所_先进核能材料研究室(ADS)
通讯作者Wang Zhi-Guang
作者单位1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Pang Li-Long,Cui Ming-Huan,Zhang Hong-Peng,et al. Spectra study of He-irradiation induced defects in 6H-SiC[J]. ACTA PHYSICA SINICA,2014,63.
APA Pang Li-Long.,Cui Ming-Huan.,Zhang Hong-Peng.,Li Yuan-Fei.,Wang Ji.,...&Zhu Ya-Bin.(2014).Spectra study of He-irradiation induced defects in 6H-SiC.ACTA PHYSICA SINICA,63.
MLA Pang Li-Long,et al."Spectra study of He-irradiation induced defects in 6H-SiC".ACTA PHYSICA SINICA 63(2014).

入库方式: OAI收割

来源:近代物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。