Influence of Deposited Energy in Sensitive Volume on Temperature Dependence of SEU Sensitivity in SRAM Devices
文献类型：会议论文
| 作者 | Liu, Tianqi1; Geng, Chao1; Zhang, Zhangang1; Zhao, Fazhan3; Hou, Mingdong2; Han, Zhengsheng3; Liu, Gang3; Luo, Jie1 ; IEEE; Xi, Kai1
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| 出版日期 | 2013 |
| 关键词 | Single event upset temperature dependence energy deposition Monte Carlo simulation SRAM heavy ions bulk and SOI technologies |
| 英文摘要 | The effects of temperature on the single-event upset (SEU) response of commercial and radiation-hardened SRAMs are investigated by experiment. The results showed that the SEU sensitivity relied on the temperature during the testing. However, it was also observed the amplitude of energy deposition of ions in sensitive volume of SRAM devices is able to affect the SEU sensitivity. When the deposited energy in sensitive volume is far larger than the critical value of inducing a SEU occurrence, the SEU sensitivity both in Bulk and SOI technologies displays a less temperature dependency. This result is attributed to the impact of energy deposition on the ion-induced transient pulse shape. The deposited energy in sensitive volume by different ions was estimated by Monte Carlo simulation and the role of energy deposition in transient pulse shape was discussed. The conclusion of detailed analysis is agreement with the results obtained in experiments. |
| 会议录 | 2013 14TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)
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| 会议录出版者 | IEEE |
| 会议录出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[10975164] ; National Natural Science Foundation of China[10805062] ; National Natural Science Foundation of China[11005134] |
| WOS研究方向 | Computer Science ; Engineering ; Physics |
| WOS记录号 | WOS:000349119800005 |
| 源URL | [http://119.78.100.186/handle/113462/57310]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Liu, Tianqi |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Beijing 730000, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou, Peoples R China 3.Chinese Acad Sci, Inst Microelect, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Tianqi,Geng, Chao,Zhang, Zhangang,et al. Influence of Deposited Energy in Sensitive Volume on Temperature Dependence of SEU Sensitivity in SRAM Devices[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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