Modifications of SiC under high fluence Kr-ion irradiation at different temperatures
文献类型：会议论文
| 作者 | Pang, Lilong1; Shen, Tielong1; Wang, Zhiguang1 ; He, Chaohui2; Xi, Jianqi2; Guo, Daxi2; Yang, Tao2; Zang, Hang2; Zhang, Peng2; Yao, Cunfeng1
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| 出版日期 | 2013-07-15 |
| 关键词 | SiC Heavy-ion irradiation Raman Mechanical property High fluence |
| 卷号 | 307 |
| DOI | 10.1016/j.nimb.2012.11.089 |
| 页码 | 558-561 |
| 英文摘要 | 4 MeV Kr-ions were irradiated into 6H-SiC single crystals with fluences from 1.0 x 10(16) to 5.0 x 10(16) cm(-2) at room temperature, 300 degrees C and 500 degrees C, respectively (5.0 x 10(16) cm(-2) at 550 degrees C). The irradiation-induced modifications were measured by Atomic Force Microscope (AFM), Raman Spectrometer and Nano-indentation measurements. It was observed that the surface of RT-irradiated samples became rough as a result of crystallizing to amorphous state. The result of Raman spectra indicates that different migration behaviors of Si and C interstitials at different temperatures could have an effect on the stoichiometry of irradiated samples. It was also observed that the hardness of irradiated samples is higher than that of un-irradiated ones at high temperatures, with increase at low fluence and then decrease at high fluence. Finally, the effects of irradiation temperature and ion fluence are discussed. (C) 2013 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000321722200123 |
| 源URL | [http://119.78.100.186/handle/113462/57515]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | He, Chaohui |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian 710049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Pang, Lilong,Shen, Tielong,Wang, Zhiguang,et al. Modifications of SiC under high fluence Kr-ion irradiation at different temperatures[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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