Production and annealing behavior of lattice damage in energetic Kr and Ne-ion implanted 6H-SiC
文献类型：会议论文
| 作者 | Meng, Yancheng1,2; Li, Jianjian1,2; Ma, Tongda3; Xu, Chaoliang1,2; Song, Yin2 ; Zhang, Chonghong2; Fu, Xin3
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| 出版日期 | 2013-07-15 |
| 关键词 | TEM 6H-SiC Defects Amorphous Recrystallization |
| 卷号 | 307 |
| DOI | 10.1016/j.nimb.2013.01.082 |
| 页码 | 552-557 |
| 英文摘要 | In the present work, specimens of 6H-SiC were implanted with 5 MeV krypton ions and 2.3 MeV neon ions, to increasing fluences of 5 x 10(13), 2 x 10(14) x 10(15) ions/cm(2) for Kr-ion and to 3.75 x 10(15) ions/cm(2) for Ne-ion, respectively. The implanted specimens were then thermally annealed, in vacuum at the temperature 500, 700 and 1000 degrees C, respectively. In addition to the measurements with nanoindentation, XRD in our previous work [1], an investigation of the microstructures by using transmission electron microscopy (TEM) was carried out. The microstructures were observed to be dominated by simple defects, planar defects and crystal amorphization under different implantation dose. Recrystallization of the buried amorphous layer was observed after thermal annealing. Mechanisms underlying the changes of microstructures and their correlation with results from HRXRD and nano-indentation measurements are discussed. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000321722200122 |
| 源URL | [http://119.78.100.186/handle/113462/57571]  |
| 专题 | 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, Chonghong |
| 作者单位 | 1.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Gen Inst Nonferrous Met, Beijing 100088, Peoples R China |
| 推荐引用方式 GB/T 7714 | Meng, Yancheng,Li, Jianjian,Ma, Tongda,et al. Production and annealing behavior of lattice damage in energetic Kr and Ne-ion implanted 6H-SiC[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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