Modification of structure and optical band-gap of nc-Si:H films with ion irradiation
文献类型：会议论文
| 作者 | Wang, Zhiguang1 ; Wei, Kongfang1; Pang, Lilong1,2; Zhu, Huiping1,2; Wang, Ji1,2; Li, Yuanfei1,2; Cui, Minghuan1,2; Sheng, Yanbin1; Zhu, Yabin1,2; Sun, Jianrong1
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| 出版日期 | 2012-09 |
| 关键词 | nc-Si:H film Irradiation Structure Optical band-gap |
| 卷号 | 286 |
| DOI | 10.1016/j.nimb.2012.02.035 |
| 页码 | 308-312 |
| 英文摘要 | Hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated by using hot-wire chemical vapor deposition are irradiated at room temperature with 6.0 MeV Xe-ions. The irradiation fluences are 1.0 x 10(13), 5.0 x 10(13) and 1.0 x 10(14) Xe-ions/cm(2). The structure and optical band-gap of the irradiated films varying with ion fluence are investigated by means of X-ray diffraction, Raman and UV-Vis-NIR spectroscopes, as well as transmission electron microscopy. It is found that the crystallite size, the crystalline fraction and the optical band-gap decrease continuously with increasing the ion fluence. The crystalline fraction of the films irradiated to the fluences from 0 to 1.0 x 10(14) Xe-ions/cm(2) decreases from about 65.7% to 2.9% and the optical band-gap decreases from about 2.1 to 1.6 eV. Possible origins of the modification of the nc-Si:H films under 6.0 MeV Xe-ions irradiation are briefly discussed. (C) 2012 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000309488300060 |
| 源URL | [http://119.78.100.186/handle/113462/57646]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Wang, Zhiguang |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Zhiguang,Wei, Kongfang,Pang, Lilong,et al. Modification of structure and optical band-gap of nc-Si:H films with ion irradiation[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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