Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions
文献类型：会议论文
| 作者 | Wang, Ji1,2; Zhu, Yabin1; Wang, Zhiguang1 ; Yao, Cunfeng1; Sun, Jianrong1; Shen, Tielong1,2; Wei, Kongfang1; Pang, Lilong1; Cui, Minghuan1,2; Li, Yuanfei1,2
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| 出版日期 | 2013-07-15 |
| 关键词 | Nc-Si:H film Ion irradiation Structure Optical band-gap |
| 卷号 | 307 |
| DOI | 10.1016/j.nimb.2012.11.093 |
| 页码 | 419-423 |
| 英文摘要 | In the present work, experimental results on irradiation effects of 30 and 196 MeV Kr-ions on nc-Si:H films are presented. The irradiation fluences are 5.0 x 10(13), 1.0 x 10(14) and 2.0 x 10(14) Kr-ions/cm(2), respectively. Irradiation induced modification on microstructure and optical properties of nc-Si:H films are studied by X-ray diffraction, Raman scattering and UV-Vis-NIR spectroscopy. The analyses results indicate that the irradiations lead to the decrease of crystalline fraction and crystallite size, as well as the increase of bond angle variation of amorphous network. The structural changes become more obvious with the nuclear energy loss increases. Moreover, with the ion fluence increases, the optical band-gap for samples irradiated with 30 MeV Kr-ions decreases gradually, while it for samples irradiated with 196 MeV Kr-ions decreases significantly at first and then remains nearly constant. It is considered that the irradiation induced atomic displacements in the films lead to the amorphization of crystalline phase and the decrease of short-range order in amorphous phase, and then result in the reduction of optical band-gap. (C) 2013 Elsevier B.V. All rights reserved. |
| 会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 会议录出版者 | ELSEVIER SCIENCE BV |
| 会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| 语种 | 英语 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS记录号 | WOS:000321722200093 |
| 源URL | [http://119.78.100.186/handle/113462/57706]  |
| 专题 | 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Wang, Zhiguang |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Ji,Zhu, Yabin,Wang, Zhiguang,et al. Modification of structure and optical band-gap of nc-Si:H films with 30 and 196 MeV Kr-ions[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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